Voltage Generation Circuit Noise Attenuation for Non-Volatile Memory
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Solution Overview
Problem
Current non-volatile memory devices face limitations in data input/output speed due to the time required for generating high voltages needed for read or write operations, which can be further hindered by noise in the voltage input and the complexity of voltage generation circuits.
Innovation Solution
The implementation of a voltage generation circuit that includes a noise attenuation circuit and a multi-stage voltage pump, with diodes to maintain voltage levels and prevent breakdown, along with an increased number of data buses for faster data transfer, reduces the time spent on generating high voltages and enhances data input/output speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high voltage generation circuits are used for read/write operations, then data input/output functionality is enabled, but data input/output speed is reduced due to voltage generation time
Solution Approach 1:
The voltage generation circuit performs preliminary action by generating and storing high voltages in advance before data input/output operations are needed. The circuit includes voltage generation units that can pre-charge capacitors with required high voltages, so when a read or write operation is initiated, the voltages are already available, eliminating the delay that would otherwise occur during voltage generation.
Solution Approach 2:
The voltage generation circuit is segmented into multiple independent voltage generation units, each capable of generating specific high voltages (e.g., 10V, 20V, 30V) independently. This segmentation allows different voltages to be prepared simultaneously in parallel, reducing the overall time required to have all necessary voltages ready for data operations.
2Productivity
If high voltage generation is performed quickly, then data input/output speed is improved, but noise in voltage input increases affecting operation reliability
Solution Approach 1:
A noise attenuation circuit is introduced as an intermediary between the voltage input and the voltage generation units. This circuit filters and cleans the input voltage signals, removing noise and instability before they reach the high-voltage generation circuitry. By placing this intermediary component in the signal path, the system can rapidly generate high voltages without the noise that would otherwise compromise operation reliability.
3Device complexity
If voltage generation circuits are simplified, then device complexity is reduced, but voltage level control and noise attenuation capability are compromised
Solution Approach 1:
The voltage generation circuit is designed with universal, multi-functional building blocks. Each voltage generation unit can generate multiple different high voltage levels (10V, 20V, 30V, etc.) by selecting different pump capacitor connections, rather than requiring separate dedicated circuits for each voltage level. This multi-functionality reduces overall circuit complexity while maintaining precise voltage control capability through selective activation of different circuit configurations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly improves data input/output speed by reducing the time for voltage generation and noise attenuation, enabling faster data processing in non-volatile memory devices, making them suitable for applications requiring high speed, such as storage class memory.
Implementation Method 1
a noise attenuation circuit configured to attenuate a noise of a second power voltage which has a level that is at least two times higher than that of a first power voltage
Implementation Method 2
a multi-stage voltage pump configured to generate at least one of plural target voltages, each target voltage having a different level, based on the noise-attenuated second power voltage
Implementation Method 3
at least one diode, of which an anode is coupled to a node of the noise-attenuated second power voltage, and a cathode is coupled to a connection of adjacent voltage pumps of the plural unit voltage pumps
Data Source
AI summary
A voltage generation circuit includes a noise attenuation circuit configured to attenuate a noise of a second power voltage which has a level that is at least two times higher than that of a first power voltage, and a multi-stage voltage pump configured to receive a noise-attenuated second power voltage from the noise attenuation circuit and generate at least one of plural target voltages, each target voltage having a different level. The first and second power voltages are individually input from an external device via different pins or pads.