Voltage Generation Circuit with Shared Resistors for Memory Devices

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Solution Overview

Problem

The increasing number of voltage generation units in semiconductor memory devices leads to larger layout sizes and higher current consumption due to the need for multiple power supply voltages, which complicates the design and efficiency of these devices.

Innovation Solution

A voltage generation circuit that shares resistors and an error amplifier among multiple voltage generation units, allowing each unit to generate different output voltages based on an input voltage, thereby reducing the layout size and current consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple voltage generation units are disposed to generate different power supply voltages, then all memory elements and circuits can be driven, but the layout size increases due to the space occupied by all voltage generation units

Engineering Contradiction:

Improveability to drive all memory elements and circuits with different power supply voltagesVSAvoidlayout size of semiconductor memory device

Core Design Contradiction:

Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

Multiple voltage generation units share common resistors that are coupled in series, merging the resistor components across different voltage generation units. This reduces the total component count and layout area while maintaining the ability to generate multiple different power supply voltages through the shared resistor network.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The shared resistors serve multiple voltage generation units simultaneously, making them multi-functional components. Each resistor in the series chain contributes to the voltage detection and generation for multiple different power supply voltages, eliminating the need for separate resistors in each voltage generation unit.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If the number of voltage generation units increases to provide multiple power supply voltages, then all memory elements and circuits can be driven, but the current consumed by the semiconductor memory device increases

Engineering Contradiction:

Improveability to provide multiple different power supply voltagesVSAvoidcurrent consumption of semiconductor memory device

Core Design Contradiction:

Adaptability or versatilityVSUse of energy by stationary object

Solution Approach 1:

The voltage generation units share common resistors and error amplifier components, merging the current-consuming elements across multiple units. This reduces the total current consumption because the shared components draw current only once rather than each unit drawing current through its own separate components.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The shared resistors and error amplifier serve multiple voltage generation units, making them multi-functional. This universal usage reduces the overall current consumption of the semiconductor memory device while maintaining the capability to generate multiple different power supply voltages.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration decreases the layout size and power consumption of semiconductor memory devices by allowing for efficient generation of multiple power supply voltages with fewer components, improving the overall efficiency and compactness of the device.

Implementation Method 1

Each of the plurality of voltage generation units comprises a plurality of resistors that are connected in series to detect the output voltages

Methodology Applied

Scientific EffectVoltage division: Ohm's Law

Data Source

PatentUS12260894B2Voltage generation circuit for memory device with series connected resistors

Publication Date: 2025.03.25 WINBOND ELECTRONICS CORP

AI summary

A voltage generation circuit and a semiconductor memory device capable of decreasing the layout size and the consumed current are provided. A voltage generation circuit includes a plurality of voltage generation units which generate different output voltages based on an external power supply voltage. Each of the plurality of voltage generation unit comprises a plurality of resistors that are connected in series to detect the output voltages. At least one of these resistors is coupled to and shared by the plurality of voltage generation units.