Volumetric Expansion Interconnects for Stacked Die Reliability
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Solution Overview
Problem
Conventional semiconductor device assembly processes face challenges in forming reliable and well-connected interconnects between stacked semiconductor dies due to design constraints and limitations in conductive material placement, which restricts the implementation of redundant interconnects and thermal regulation.
Innovation Solution
Utilizing the thermophysical properties of conductive materials, such as copper, which expand volumetrically when heated, to create interconnects by placing reservoirs of conductive material adjacent to openings in dielectric layers, allowing them to expand into these vacancies and form robust connections between semiconductor dies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional packaging processes are used to electrically couple bond pads to electrical terminals, then the die can be protected from environmental factors, but the interconnect reliability and thermal management are insufficient
Solution Approach 1:
The patent applies preliminary action by pre-forming conductive material reservoirs within the dielectric layer before final packaging. These reservoirs are strategically positioned to expand into interconnect openings during subsequent heating, creating robust interconnects that enhance reliability while simplifying the overall packaging process
Solution Approach 2:
The patent utilizes parameter changes by heating the conductive material reservoirs to induce volumetric expansion. This thermal parameter change transforms the reservoirs from a relatively small pre-formed state to a expanded state that fills interconnect openings and creates reliable electrical connections between stacked dies
2Reliability
If the width of conductive material is constrained by interconnect opening dimensions, then manufacturing precision is maintained, but redundant interconnects cannot be formed for enhanced reliability
Solution Approach 1:
The patent applies preliminary action by pre-forming conductive material reservoirs with dimensions larger than the final interconnect opening requirements. These reservoirs are prepared in advance within the dielectric layer, allowing subsequent expansion to create wider interconnects with redundant pathways while maintaining precise control over the initial reservoir formation
Solution Approach 2:
The patent applies dimensionality change by transitioning from two-dimensional conductive material traces to three-dimensional volumetric reservoirs that expand in multiple dimensions. This allows the conductive material to exceed the width constraints of planar interconnect openings, creating redundant interconnect paths without compromising manufacturing precision
3Temperature
If conductive material is heated to volumetrically expand, then robust interconnects with enhanced thermal management are formed, but additional processing steps are required
Solution Approach 1:
The patent merges multiple functions into a single heating step: the conductive material reservoir expansion to form interconnects, the dielectric layer bonding between stacked dies, and the establishment of electrical connections. This consolidation achieves robust interconnects with enhanced thermal management capability while minimizing additional processing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of redundant interconnects that enhance reliability and thermal regulation, reducing the likelihood of failure and allowing for more design flexibility in semiconductor device assemblies.
Implementation Method 1
the reservoir of conductive material is heated to volumetrically expand the reservoir of conductive material through the one or more interconnect openings to form one or more interconnects
Data Source
AI summary
This document discloses techniques, apparatuses, and systems for semiconductor device interconnects formed through volumetric expansion. A semiconductor assembly is described that includes two semiconductor dies. The first semiconductor die and the second semiconductor die are bonded at a dielectric layer of the first semiconductor die and a dielectric layer of the second semiconductor die to create one or more interconnect openings. The first semiconductor die includes a reservoir of conductive material located adjacent to the one or more interconnect openings and having a width greater than a width of the one or more interconnect openings. The reservoir of conductive material is heated to volumetrically expand the reservoir of conductive material through the one or more interconnect openings to form one or more interconnects electrically coupling the first semiconductor die and the second semiconductor die. In this way, a connected semiconductor device may be assembled.