Wafer Bonding Cavity Structure Using Bernoulli Suction Flow
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Solution Overview
Problem
The existing bonding cavity structures in integrated circuit manufacturing face issues with force uniformity during wafer bonding, particularly for wafers with warpage, leading to process deviations and contamination from uncontrolled airflow, which affects the cleanliness and yield of the bonding process.
Innovation Solution
A bonding cavity structure with a gas-flow forming mechanism using integrated arms with nozzles that generate a high-speed gas flow to create a low-pressure Bernoulli effect, providing uniform tension forces and reducing particle impact, combined with a gas flow control system and air pressure sensors for real-time feedback.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Force
If single-sided thrust forces are applied through carriers to bond wafers, then bonding process can be initiated, but force uniformity deteriorates causing process deviation especially for wafers with warpage
Solution Approach 1:
The patent introduces gas flow as an intermediary medium between the carriers and wafers. The gas flow generates Bernoulli effect-induced suction forces that act uniformly across the wafer surfaces, mediating the bonding process and improving force distribution compared to direct mechanical contact alone
Solution Approach 2:
The patent changes the physical parameters of the bonding environment by introducing controlled gas flow and creating negative pressure conditions. This transforms the bonding mechanism from purely mechanical thrust to a combination of thrust and aerodynamic suction forces, improving uniformity
2Ease of operation
If normal pressure state is maintained in bonding cavity, then equipment operation is simple, but airflow disturbance causes particle contamination and affects bonding quality
Solution Approach 1:
The patent creates a controlled atmospheric environment within the bonding cavity by maintaining negative pressure and introducing inert gas flow. This inert environment prevents particle contamination while the negative pressure condition suppresses unwanted airflow disturbances from the external environment
Solution Approach 2:
The patent uses pneumatic principles by introducing gas flow through nozzles and creating negative pressure zones. The gas flow system controls the atmospheric conditions within the bonding cavity, eliminating particle contamination while maintaining operational control
3Device complexity
If open atmospheric pressure state is used in bonding cavity, then space control is simple, but uncontrolled airflow affects bonding forces and reduces yield
Solution Approach 1:
The patent implements feedback control by using air pressure sensors to monitor the bonding cavity pressure and adjust gas flow accordingly. This feedback mechanism maintains stable negative pressure conditions, ensuring consistent bonding forces and high yield while managing system complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances force uniformity during bonding, reduces particle contamination, and maintains a controlled environment, improving the consistency and yield of the wafer bonding process.
Implementation Method 1
the nozzles are switched to be used as gas nozzles or vacuum suction nozzles; wherein, during closing all the integrated arms, all the nozzles located on a side of two wafers are set as the gas nozzles, which blow gas parallel to the wafer bonding surfaces, meanwhile, all the nozzles located on the other side of the two wafers are set as the vacuum suction nozzles, which suck the gas blown from the gas nozzle at corresponding position, a high-speed gas-flow is generated between the two wafers, so as to produce a low pressure of Bernoulli effect
Data Source
AI summary
The present invention discloses a bonding cavity structure and a bonding method, the bonding cavity structure comprises an upper carrier and a lower carrier, a gas-flow forming mechanism, which comprises multiple open-close integrated arms, the integrated arms are provided with multiple nozzles facing to wafer bonding surfaces, and the nozzles are switched to gas nozzles or vacuum suction nozzles, a closed space is formed by all the integrated arms closed together with the carriers, all the nozzle located on a side of two wafers are set as the gas nozzles, which blow gas parallel to the wafer bonding surfaces, meanwhile, all the nozzles located on the other side of the two wafers are set as the vacuum suction nozzles, which suck the gas blown from the gas nozzle at corresponding position, a high-speed gas-flow is generated between the two wafers, so as to produce a low pressure of Bernoulli effect, the wafers are not only subjected to thrust forces from backsides, but tension forces between the bonding surfaces are also affected by uniform low pressure, which enhances force uniformity during bonding process, and reduces an impact of particles on the bonding surfaces in the closed space.