Wafer Bonding Preheating to Suppress Particle Generation
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Solution Overview
Problem
Conventional bonding methods for semiconductor wafers result in particle generation due to thermal expansion when heating the adhesive, leading to improper bonding between the wafer and the supporting substrate.
Innovation Solution
A joint method involving preheating the processing target substrate before suction-holding it on a holding unit, followed by heating, to suppress thermal expansion and reduce particle generation during the bonding process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the adhesive is heated to bond the wafer and supporting substrate, then the bonding strength is improved, but the wafer thermally expands and generates particles that worsen bonding quality
Solution Approach 1:
The wafer is preheated before being suction-held on the holding unit during the bonding process. This preliminary heating action reduces the thermal gradient when the adhesive is subsequently heated, minimizing thermal expansion of the wafer and preventing particle generation from rubbing between the wafer and holding unit, thereby maintaining bonding quality while achieving adequate bonding strength
Solution Approach 2:
The temperature parameter of the wafer is changed by preheating it to a specific temperature range before the bonding process. This parameter change reduces the relative thermal expansion when the adhesive is heated, eliminating the harmful rubbing effect between the wafer and holding unit while still allowing the adhesive to achieve proper bonding strength
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures proper bonding of the processing target substrate and the supporting substrate by minimizing particle generation, enhancing the bonding process's reliability and efficiency.
Implementation Method 1
the wafer thermally expands and the wafer and the first holding member rub against each other to generate particles
Implementation Method 2
suction-holding the processing substrate and the supporting substrate respectively on a first holding unit and a second holding unit
Data Source
AI summary
When joining a processing target substrate and a supporting substrate together by suction-holding the processing substrate and the supporting substrate respectively on a first holding unit and a second holding unit arranged to face each other and pressing the second holding unit toward the first holding unit while heating the substrates by heating mechanisms of the holding units, the present invention preheats at least the processing target substrate before suction-holding the processing target substrate on the first holding unit to suppress generation of particles when joining the processing target substrate and the supporting substrate together so as to properly perform the joining of the processing target substrate and the supporting substrate.