Wafer Cleaning Temperature Sequencing for Deep Pattern Penetration
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Solution Overview
Problem
Existing substrate cleaning methods face challenges in achieving deep penetration of liquid chemicals into fine patterns on semiconductor wafers, leading to incomplete impurity removal and reduced cleaning efficiency, especially with small pattern spacing or hole patterns.
Innovation Solution
A substrate processing apparatus and method that involves initially ejecting a heat transfer medium with a temperature higher than the liquid chemical onto the substrate, followed by the liquid chemical ejection, to enhance penetration and minimize pattern damage through controlled temperature differences and rotational forces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If liquid chemical is simply ejected from above the center of the substrate and moves outward due to centrifugal force, then the cleaning process is simple, but the penetration depth of the liquid chemical is limited and impurities near the bottoms of the patterns are not easily removed
Solution Approach 1:
The substrate is pre-heated to a temperature of 40°C to 80°C before liquid chemical ejection. This preliminary heating action reduces the viscosity of the liquid chemical and enhances its penetration capability into the patterns, allowing impurities near the bottoms to be effectively removed without changing the simple ejection method
Solution Approach 2:
The temperature of the substrate is changed from room temperature to 40°C to 80°C through pre-heating. This parameter change significantly improves the penetration depth of the liquid chemical into the patterns, enabling effective cleaning of impurities that would otherwise be inaccessible
2Manufacturing precision
If the substrate has small pattern spacing or includes hole patterns, then the substrate design is more advanced, but the resistance applied to the liquid chemical increases and penetration depth is further limited
Solution Approach 1:
The substrate temperature is elevated to 40°C to 80°C before liquid chemical application. This temperature parameter change reduces the viscosity and surface tension of the liquid chemical, enabling it to penetrate into closely spaced patterns and hole patterns that would otherwise resist liquid infiltration
Solution Approach 2:
The substrate undergoes pre-heating treatment before liquid chemical ejection. This preliminary action prepares the substrate and liquid chemical interface conditions, allowing the liquid chemical to overcome the resistance posed by small pattern spacing and effectively reach the bottoms of hole patterns
3Reliability
If liquid chemical is used to clean the substrate, then impurities are removed, but damage to the substrate due to physical or chemical processing may occur
Solution Approach 1:
The substrate temperature is controlled within the range of 40°C to 80°C, which is high enough to improve liquid chemical penetration but low enough to prevent thermal damage to the substrate. This optimized temperature parameter achieves effective cleaning while minimizing harmful effects
Solution Approach 2:
The substrate is pre-heated to an optimal temperature before liquid chemical application. This preliminary heating action ensures that the liquid chemical penetrates effectively without requiring excessive chemical strength or prolonged exposure, thereby reducing the risk of substrate damage while maintaining cleaning effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for deep penetration of liquid chemicals into substrate patterns, improving cleaning efficiency and reducing damage, thereby enhancing semiconductor yield and processing quality.
Implementation Method 1
an ejector provided at a side of the treatment space to eject a heat transfer medium with a temperature different from the temperature of the liquid chemical onto the substrate
Implementation Method 2
a substrate supporter mounted in the treatment space to rotate about a rotational axis, and provided to support the substrate
Implementation Method 3
The liquid chemical is simply ejected from above the center of the substrate, moves outward due to centrifugal force of the rotating substrate
Data Source
AI summary
Provided is a substrate processing apparatus and substrate processing method capable of allowing a liquid chemical to penetrate deeply into patterns of a substrate, the substrate processing apparatus including a housing for forming a treatment space where a substrate is processed, a substrate supporter mounted in the treatment space to rotate about a rotational axis, and provided to support the substrate, a liquid chemical supplier provided above the substrate supporter to eject a liquid chemical toward an upper surface of the substrate supported by the substrate supporter, and an ejector provided at a side of the treatment space to eject a heat transfer medium with a temperature different from the temperature of the liquid chemical onto the substrate.