Wafer Cleaning Swing Dispenser Sidewall Residue

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Solution Overview

Problem

The semiconductor process faces challenges in effectively removing etching residues from the sidewalls of damascene openings after the etching process, which affects the quality of metal interconnects and decreases yield.

Innovation Solution

A wafer cleaning process involving a dispenser that moves back and forth along a swing path over the wafer center, with the dispensing region covering 0-30% of the wafer radius, while the wafer rotates, ensuring targeted application of a cleaning solution to remove etching residues.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a wet clean process is performed with surfactant to remove etching residue from the substrate, then the etching residue on the substrate surface is removed, but the etching residue on the sidewall of the damascene opening cannot be effectively cleaned

Engineering Contradiction:
Improvecleaning effectivenessVSAvoidetching residue on sidewall
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The cleaning solution is dispensed in a localized region covering 0-30% of the wafer radius from the center, concentrating the cleaning action where it is most needed rather than uniformly across the entire wafer surface

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The dispenser moves in a two-dimensional swing path (back and forth motion) over the wafer center while the wafer rotates, creating comprehensive coverage of the dispensing region through combined linear and rotational motion

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Area of stationary object

If the dispenser moves along a swing path covering a larger area of the wafer, then the cleaning coverage is increased, but the cleaning efficiency and effectiveness on the sidewall residue is reduced

Engineering Contradiction:
Improvecleaning coverage areaVSAvoidcleaning efficiency
Core Design Contradiction:
Area of stationary objectVSProductivity

Solution Approach 1:

The cleaning solution is dispensed in a localized region covering 0-30% of the wafer radius from the center, concentrating the cleaning action where it is most needed rather than uniformly across the entire wafer surface

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The dispenser operates within a partial region (0-30% of wafer radius) rather than covering the entire wafer, providing sufficient cleaning action for the critical area where sidewall residues are most problematic

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively reduces defects and improves the cleaning efficiency, achieving better results than conventional methods by focusing the cleaning solution on a smaller area around the wafer center, thereby enhancing the quality of metal interconnects and increasing yield.

Implementation Method 1

a wet clean process is performed with the use of the surfactant to remove the etching residue from the substrate

Methodology Applied
Scientific EffectSurfactant: Surfactant

Data Source

PatentUS7691206B2Wafer cleaning process
Publication Date: 2010.04.06 UNITED MICROELECTRONICS CORP
  • US7691206B2 patent drawing
  • US7691206B2 patent drawing
  • US7691206B2 patent drawing

AI summary

The invention is directed to a wafer cleaning process for being applied on a wafer after an etching process is performed on the wafer, wherein the wafer has a wafer center, a wafer radius and a wafer circumference. The wafer cleaning process comprises a step of dispensing a cleaning solution over the wafer by using a dispenser while the dispenser is moving back and forth along a swing path over the wafer around the wafer center, wherein the wafer center is projected to a midpoint of the swing path.