Wafer Composite with Sacrificial Separation Layer
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Solution Overview
Problem
There is a need for cost-effective methods to produce high-quality monocrystalline semiconductor layers for manufacturing semiconductor components, as existing methods are inefficient in achieving high crystal quality.
Innovation Solution
A method involving a wafer composite with a donor substrate, an auxiliary substrate, and a separation layer with a support structure and sacrificial material, where the auxiliary substrate is separated from the donor substrate by selective removal of the sacrificial material, facilitating the growth of epitaxial layers and the formation of semiconductor components with minimal impairment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional methods are used to produce monocrystalline semiconductor layers, then crystal quality can be achieved, but the production cost is high and efficiency is low
Solution Approach 1:
The invention segments the substrate system into three distinct components: a donor substrate containing the monocrystalline seed layer, an auxiliary substrate providing mechanical support, and a separation layer with sacrificial material enabling their dissociation. This segmentation allows the monocrystalline layer to be grown on a stable donor substrate while the auxiliary substrate provides structural integrity during processing, resolving the contradiction between achieving high crystal quality and maintaining production efficiency
Solution Approach 2:
The separation layer with sacrificial material acts as an intermediary between the donor substrate and auxiliary substrate. It enables temporary bonding during the epitaxial growth process to ensure mechanical stability and crystal quality, then allows clean separation afterward to enable efficient production cycles. This intermediary mechanism resolves the contradiction by providing both stability during growth and efficiency during production
2Strength
If the auxiliary substrate is used to support the donor substrate, then mechanical stability is improved, but separation and processing complexity increases
Solution Approach 1:
The invention extracts the mechanical support function from the donor substrate itself and places it in a separate auxiliary substrate. This allows the donor substrate to focus on providing high-quality monocrystalline growth while the auxiliary substrate provides pure mechanical support. The separation layer with sacrificial material enables clean extraction of the auxiliary substrate after processing, resolving the contradiction between mechanical stability and separation complexity
Solution Approach 2:
The separation layer with sacrificial material is designed as a disposable component that facilitates the separation process and is then removed. This disposable approach simplifies the overall separation complexity by providing a dedicated, easy-to-remove bonding mechanism between the auxiliary and donor substrates, resolving the contradiction between mechanical stability during processing and ease of separation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of high-quality semiconductor components with improved mechanical stability and integrity, allowing for efficient processing and separation of functional elements, thereby addressing the challenge of achieving high crystal quality at a lower cost.
Implementation Method 1
the separation includes a selective removal of the sacrificial material in relation to the support structure
Data Source
AI summary
This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.