Semiconductor Wafer Defect Differentiation via Multi-Angle Laser Inspection
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Solution Overview
Problem
Existing methods for evaluating semiconductor wafers with coating layers struggle to distinguish between deposits and non-deposited convex defects, which are different in terms of cause and impact on subsequent processes.
Innovation Solution
A method using a laser surface inspection device with two incident systems and three light receiving systems, differing in incidence angle and light-receiving characteristics, to detect and differentiate between deposits and non-deposited convex defects based on measurement results.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a single incident system and two light receiving systems are used, then the device complexity is reduced, but the measurement precision for distinguishing deposit and non-deposited convex defect is insufficient
Solution Approach 1:
The inspection device is segmented into multiple independent incident systems (first and second incident systems with different incidence angles) and multiple light receiving systems (first, second, and third light receiving systems with different light-receiving angles and polarization selectivities). This segmentation allows each subsystem to capture specific defect characteristics, and the combination of multiple measurement results enables precise differentiation between deposits and non-deposited convex defects while maintaining modular device architecture.
2Adaptability or versatility
If multiple measurement systems with different angles and polarization selectivities are used, then the defect detection capability is improved, but the device complexity increases
Solution Approach 1:
The inspection device is designed with multi-functionality where the first and second incident systems can both illuminate the coating layer surface but at different incidence angles, and the three light receiving systems can all detect radiated light but with different light-receiving angles and polarization selectivities. This universal design allows a single device to perform multiple detection functions simultaneously, capturing various defect characteristics through different optical paths and analysis methods, thereby improving defect detection capability without requiring separate specialized devices for each function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise detection and differentiation of deposits and non-deposited convex defects, improving the evaluation of semiconductor wafers and reducing the risk of abnormal operations in subsequent processes.
Implementation Method 1
detecting a defect kind selected from the group consisting of a deposit and a non-deposited convex defect present on a surface of the coating layer as a light point defect based on a plurality of measurement results including three kinds of low incidence angle measurement results obtained by, on the surface of the coating layer, reception of a radiated light radiated by reflection or scattering of a light incident from the first incident system
Implementation Method 2
reception of a radiated light radiated by reflection or scattering of a light incident from the first incident system at the surface
Data Source
AI summary
A method of evaluating a semiconductor wafer by a laser surface inspection device. The method includes performing evaluation of the wafer by detecting a defect kind of one of a deposit and a non-deposited convex defect present on a surface of a coating layer as a light point defect based on a plurality of measurement results including three kinds of low incidence angle measurement results obtained by, on the surface of the coating layer, reception of a radiated light radiated by reflection or scattering of a light incident from a first incident system at the surface by three kinds of light receiving systems, and at least one high incidence angle measurement result obtained by reception of a radiated light radiated by reflection or scattering of a light incident from a second incident system at the surface by at least one of the three kinds of light receiving systems.