Semiconductor Wafer Dicing with Support Material Segmentation

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Solution Overview

Problem

The existing methods for dicing semiconductor wafers with thick and thin portions suffer from reduced yield due to incomplete cutting of the thick portion, chipping, and increased cracking, especially when using dicing tapes with uneven attachment caused by the rib structure, leading to lower quality semiconductor devices.

Innovation Solution

A method involving the attachment of a support material to the semiconductor wafer, dividing it into thick and thin portions before dicing, and using this support material to prevent cracking and chipping during the dicing process, thereby improving the quality of the semiconductor devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the entire surface of the wafer is diced under the same condition, then the dicing process can be completed uniformly, but the cutting of the thick portion will be incomplete resulting in chipping and separation during expansion

Engineering Contradiction:
Improvedicing qualityVSAvoiddicing process complexity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The wafer surface is divided into a thick portion (outer circumferential region with rib structure) and a thin portion (central region). Different dicing conditions are applied to each region: the thin portion is diced first under conditions suitable for thin material, then the thick portion is diced separately under conditions optimized for thick material. This segmentation allows each region to be processed with appropriate parameters, preventing incomplete cutting and chipping while maintaining overall dicing quality.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If a condition suitable for the thin portion is employed, then the thin portion can be diced properly, but the thick portion will be incompletely cut causing chipping and separation

Engineering Contradiction:
Improvethin portion dicing qualityVSAvoidwafer structural integrity
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The thin portion of the wafer is diced first under conditions optimized for thin material before the thick portion is processed. This preliminary action on the thin portion allows it to be properly separated without affecting the structural integrity of the thick portion during the first dicing step. The thick portion is then diced in a subsequent step under appropriate conditions, preventing incomplete cutting and chipping while maintaining reliability.

Inventive Principle:
Principle #10Preliminary action

3Manufacturing precision

If the thick portion is removed before dicing, then the dicing quality improves, but the risk of occurrence of cracking and chipping of the wafer increases

Engineering Contradiction:
Improvedicing qualityVSAvoidcracking and chipping risk
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

A support material is introduced as an intermediary element to attach to the back surface of the wafer before the dicing process. This support material provides mechanical strength and structural stability during handling and dicing operations, reducing the risk of cracking and chipping. The support material remains in place throughout the dicing process, allowing high-quality cutting of both thin and thick portions while protecting the wafer from damage. After dicing, the support material can be removed along with the rib structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS8993413B2Method of manufacturing semiconductor device
Publication Date: 2015.03.31 MITSUBISHI ELECTRIC CORP
  • US8993413B2 patent drawing
  • US8993413B2 patent drawing
  • US8993413B2 patent drawing

AI summary

A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor wafer having a thick portion in an outer circumferential end portion and a thin portion in a central portion, attaching a support material to one surface of the semiconductor wafer, dividing the semiconductor wafer into the thick portion and the thin portion, and cutting the thin portion, after the division, while supporting the thin portion by the support material.