Wafer Structure Dummy Trench Layout for Damage-Safe Dicing
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Solution Overview
Problem
The existing wafer dicing process often results in abnormal dicing or damage to semiconductor devices during the separation of semiconductor devices from a wafer structure, leading to reliability issues.
Innovation Solution
A wafer structure design incorporating a substrate with device regions and dummy regions, featuring a cell array structure with vertical channel structures, dummy patterns, and recessed portions to enhance separation and protect the devices during dicing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional dicing process is used to separate semiconductor devices, then productivity is improved, but reliability deteriorates due to abnormal dicing or damage to devices
Solution Approach 1:
A dummy pattern is formed in advance in the dummy region surrounding the device region. This dummy pattern serves as a sacrificial structure that absorbs dicing forces and prevents damage to the actual semiconductor devices during the separation process, thereby resolving the contradiction between efficient dicing and device integrity.
2Reliability
If dummy region is added around device region, then reliability is improved by preventing dicing damage, but device complexity increases
Solution Approach 1:
The dummy pattern is created as a simplified copy or replica of the actual device structure, using the same or similar materials and formation processes. This allows the dummy region to provide protective functionality without significantly increasing manufacturing complexity, as it can be formed using standard semiconductor fabrication techniques.
3Reliability
If dummy pattern is formed to cover sidewall and bottom of recessed portion, then reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The dummy pattern is specifically positioned to cover only the critical areas - the sidewall and bottom surface of the recessed portion in the dummy region. This localized approach provides targeted protection where it is most needed during dicing, while minimizing the overall complexity and precision requirements compared to protecting the entire wafer surface.
Data Source
AI summary
A wafer structure may include a substrate including device region and a scribe lane region in a plan view, a logic structure on the substrate, the logic structure including a plurality of peripheral circuits, and a cell array structure on the logic structure. The cell array structure may include a plurality of first dielectric layers vertically spaced apart from each other, a vertical channel structure on the device region of the semiconductor substrate and penetrating the plurality of first dielectric layers, a dummy pattern laterally spaced apart from the vertical channel structure, a first trench penetrating the plurality of first dielectric layers on the scribe lane region of the substrate, and a void in the first trench. The dummy pattern may cover a sidewall of the first trench and a bottom surface of the first trench.