Wafer Edge Polishing Profile Prediction for Target Shape Control
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Solution Overview
Problem
Existing methods require manual selection of polishing conditions based on pre-polishing profiles, which is time-consuming and lacks flexibility to achieve desired post-polishing profiles for substrates with varying initial conditions.
Innovation Solution
A polishing-information processing apparatus that uses a learned model to predict and correct polishing conditions based on acquired substrate profiles before and after polishing, incorporating factors like holding-stage, polishing-head, and polishing-liquid conditions, to achieve a target post-polishing profile.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If manual selection of polishing conditions is used based on pre-polishing profiles, then operator expertise can be applied to create suitable polishing conditions, but the process is time-consuming and lacks flexibility to achieve desired post-polishing profiles for substrates with varying initial conditions
Solution Approach 1:
The system enables automatic determination of polishing conditions through the determination unit, which autonomously selects optimal conditions based on measured substrate profiles and stored polishing condition data, eliminating the need for manual operator intervention while maintaining precision
Solution Approach 2:
The patent replaces the manual mechanical process of profile measurement and condition selection with an automated information processing system that uses measurement data and stored profiles to automatically determine polishing conditions
2Productivity
If pre-prepared polishing conditions are used for each substrate type, then polishing can be performed quickly, but the system cannot adapt to various profiles of the same substrate type or achieve different desired post-polishing profiles
Solution Approach 1:
The system dynamically determines polishing conditions based on the specific measured profile of each substrate, allowing adaptation to various profiles within the same substrate type while maintaining efficient automated processing
Solution Approach 2:
The determination unit selects and adjusts polishing conditions including pressing force, rotation speed, and polishing time parameters based on the measured substrate profile and desired post-polishing profile, enabling flexible adaptation to different requirements
3Reliability
If operator creates polishing conditions based on measured profiles, then specialized knowledge can be applied, but the process requires significant time and manual intervention
Solution Approach 1:
The determination unit autonomously determines polishing conditions by comparing measured substrate profiles with stored reference profiles and selecting appropriate conditions, eliminating manual operator involvement while maintaining reliable results
Solution Approach 2:
The system uses feedback from the measurement unit's profile data to automatically adjust and select polishing conditions, creating a closed-loop system that ensures accuracy without manual intervention
Data Source
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Figure 2A~2B
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AI summary
The present invention relates to a polishing-information processing apparatus provided in a polishing apparatus for polishing a peripheral portion of a substrate. The polishing-information processing apparatus (112) includes an information acquisition part (241) for acquiring polishing conditions and profiles of a peripheral portion of a wafer (W) before and after polishing; a state prediction part (240b) for predicting a profile of the peripheral portion of the substrate after polishing by inputting the polishing conditions and the profile of the peripheral portion of the substrate before polishing, which are newly acquired, into a learned model; and a correction part (242) for correcting the predicted profile of the peripheral portion of the substrate after polishing based on the profile of the peripheral portion of the substrate after polishing, which is predicted by the state prediction part (240b) and a target profile.