Photocurable Wafer Edge Resin for Metal Contamination Control
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Solution Overview
Problem
In semiconductor manufacturing, the challenge lies in preventing metal contamination at the wafer edges during the lithography process, particularly when forming a wafer edge protective film, as existing methods fail to effectively prevent metal adhesion and subsequent contamination of non-targeted areas, leading to cross-contamination issues.
Innovation Solution
A photocurable resin composition containing a solvent and polymers or compounds with a polycyclic aromatic hydrocarbon group, such as naphthalene, anthracene, or pyrene, which forms a protective film with a viscosity of 100 cps or less at 25°C, preventing metal contamination by forming a protective layer on the wafer edges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a chemical solution containing metal is applied to improve etching selection ratio and resist resolution, then etching performance is improved, but metal contamination occurs on peripheral edge surfaces and back surfaces
Solution Approach 1:
The invention divides the wafer into targeted areas (front surface excluding peripheral edges) and non-targeted areas (peripheral edge surfaces and back surfaces). By applying coating film formation conditions that prevent metal-containing solutions from adhering to peripheral edges, the process segments the coating application to avoid contamination while maintaining etching performance on the main processing area.
Solution Approach 2:
The invention implements different coating film formation conditions for different regions of the wafer. The front surface receives the metal-containing chemical solution for improved etching performance, while the peripheral edge surfaces are protected from contamination through controlled coating parameters, creating local quality differences in metal deposition across the wafer surface.
2Area of stationary object
If chemical solution flows to peripheral edges during coating, then complete coverage is achieved, but cross-contamination occurs on subsequent wafers
Solution Approach 1:
The invention applies preliminary anti-action by establishing coating film formation conditions before the coating process that actively prevent metal-containing solutions from reaching peripheral edge surfaces. By controlling parameters such as coating speed, solution flow rate, and wafer rotation, the process preemptively blocks contamination pathways while maintaining adequate coverage on the front surface for subsequent processing steps.
3Object-affected harmful factors
If a protective film is formed on wafer edges, then metal contamination is prevented, but the film must withstand exposure and etching processes
Solution Approach 1:
The invention applies preliminary action by forming a protective coating film on the peripheral edge surfaces before the lithography and etching processes. This pre-formed film serves as a barrier against metal contamination during subsequent processing steps, while its composition and formation conditions are optimized to provide sufficient strength and adhesion to withstand the exposure and etching processes without compromising the main pattern formation areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The photocurable resin composition effectively forms a protective film with a thickness of 1 nm to 10 μm on semiconductor wafers, preventing metal contamination and ensuring clean processing by forming a robust, photocurable edge protective film that withstands exposure and etching processes.
Implementation Method 1
a photocurable resin composition comprising a solvent and a polymer and/or compound, which contains a polycyclic aromatic hydrocarbon group
Data Source
AI summary
Provided is a photo-curable resin composition that is useful for the formation of a wafer edge part protection film for use in the production of a semiconductor. The photo-curable resin composition comprises: a compound containing a polycyclic aromatic hydrocarbon group derived from naphthalene, anthracene, phenanthrene, pyrene or the like and/or a polymer such as polyvinyl alcohol, polyacrylamide, a (meth)acrylic resin, polyamic acid, polyhydroxystyrene, a polyhydroxystyrene derivative, a copolymer of a polymethacrylate and maleic anhydride, an epoxy resin, a phenolic resin, a novolac resin, polyimide, cellulose, a cellulose derivative, starch, chitin, chitosan, gelatin, zein, a sugar-backbone polymeric compound, polyamide, polyethylene terephthalate, a polycarbonate, polyurethane, polysiloxane or the like; and a solvent. The composition has a viscosity of 100 cps or less at 25° C. and is cured with light having a wavelength of 170 to 800 nm.