Wafer Separation Frame for Controlled Laser Penetration Dicing
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Solution Overview
Problem
Existing methods for separating electronic components from a wafer, such as laser cutting, often result in damage to the components due to the risk of defects and uneven separation lines, particularly in MEMS-type components with large die sizes and high sensitivity to defect density.
Innovation Solution
Incorporating a laser penetration affecting structure into the separation frame that controls laser penetration in a spatially dependent manner, using design elements of the chip circuit and layer stack to minimize defects and enhance breaking strength during stealth dicing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If mechanical or laser cutting is used to separate electronic components from a wafer, then separation is achieved, but the electronic components may be damaged during separation
Solution Approach 1:
The separation frame is designed with varying laser penetration properties at different locations. The laser penetration affecting structure includes regions with different optical densities that selectively control laser beam penetration depth and energy distribution, allowing precise separation while protecting sensitive electronic components from damage
Solution Approach 2:
The laser penetration affecting structure acts as an intermediary between the laser beam and the electronic components. It modulates the laser energy distribution, creating a controlled separation path that minimizes direct laser exposure to sensitive components while maintaining separation effectiveness
2Manufacturing precision
If laser processing is applied during stealth dicing, then separation precision is improved, but defect density increases due to uncontrolled laser penetration
Solution Approach 1:
The laser penetration affecting structure creates localized variations in laser beam interaction. By designing specific regions with different optical properties, the system achieves precise separation paths while controlling laser energy deposition, thereby reducing unwanted defects in the separated electronic components
Solution Approach 2:
The structure modifies laser processing parameters locally by changing the optical density distribution. This controls the laser penetration depth and energy distribution dynamically across different regions of the separation frame, optimizing separation precision while minimizing defect generation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces defect density and enhances breaking strength, ensuring precise separation with minimal damage to the electronic components, particularly in MEMS-type components, by controlling laser impact through a hardware design that adjusts laser penetration.
Implementation Method 1
the separation frame comprises a laser penetration affecting structure configured for locally affecting laser penetration when subjecting the separation frame to laser processing
Implementation Method 2
configured for locally affecting laser penetration when subjecting the separation frame to laser processing during stealth dicing
Data Source
AI summary
A wafer, electronic component and method are disclosed. In one example, the wafer comprises an array of a plurality of electronic components. The separation frame separating neighboured electronic components, wherein the separation frame comprises a laser penetration affecting structure configured for locally affecting laser penetration when subjecting the separation frame to laser processing during stealth dicing.