Wafer Scale Packaging Single Crystal Acoustic Resonators
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Solution Overview
Problem
Conventional RF technology based on amorphous materials has poor electromechanical coupling efficiency, leading to high transmit power dissipation and limitations in supporting multiple frequency bands, which affects the performance of smartphones in terms of signal quality and battery life.
Innovation Solution
The use of single crystal acoustic resonators and filters, integrated using wafer scale packaging, which employs gallium and nitrogen-containing materials to enhance electromechanical coupling efficiency and reduce filter insertion loss, enabling better signal quality and longer battery life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional amorphous materials are used in RF technology, then device complexity is reduced and ease of manufacture is improved, but electromechanical coupling efficiency deteriorates leading to high power dissipation
Solution Approach 1:
The patent changes the material parameter from amorphous to single crystal structure, specifically using gallium nitride (GaN) and aluminum nitride (AlN) single crystal layers. This parameter change transforms the electromechanical coupling coefficient from poor to excellent, reducing power dissipation while maintaining manufacturability through established semiconductor fabrication processes
Solution Approach 2:
The patent employs a composite material structure consisting of multiple single crystal layers including GaN piezoelectric layers, AlN buffer layers, and semiconductor substrate. This composite approach combines the advantages of different materials to achieve high electromechanical coupling efficiency while managing thermal and structural requirements
2Reliability
If conventional amorphous materials are used, then device simplicity is maintained, but signal quality deteriorates due to poor electromechanical coupling
Solution Approach 1:
The patent changes the crystalline parameter from amorphous to single crystal, which fundamentally improves signal quality by enhancing electromechanical coupling. The single crystal structure eliminates grain boundaries and defects present in amorphous materials, providing superior signal transmission and filtering performance
Solution Approach 2:
The patent replaces the simple amorphous material system with a sophisticated single crystal layered structure. This substitution introduces controlled complexity in the form of multiple epitaxial layers with specific orientations and compositions, which mechanically and electrically optimize the device performance
3Duration of action of moving object
If conventional RF technology is used, then battery consumption is reduced in terms of complexity, but battery life deteriorates due to high power dissipation
Solution Approach 1:
The patent changes the material's electromechanical coupling parameter by transitioning to single crystal GaN and AlN, which dramatically reduces power dissipation in RF operations. This parameter change directly extends battery life by improving energy efficiency in smartphone RF circuits
Solution Approach 2:
The patent applies local quality optimization by creating specific functional layers with distinct properties within the semiconductor structure. The GaN piezoelectric layers provide high coupling efficiency at specific locations, while AlN buffer layers manage stress and thermal properties locally, collectively reducing overall power consumption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves tripled electromechanical coupling efficiency, reduces filter insertion loss by 1 dB, improves thermal management, and enhances signal quality, leading to more efficient spectral use and extended battery life in smartphones.
Implementation Method 1
single crystal acoustic resonators and filters, integrated using wafer scale packaging, which employs gallium and nitrogen-containing materials to enhance electromechanical coupling efficiency
Implementation Method 2
a copper pillar interconnect structure configured to fill the first region and the second region using a deposition process to form a first copper pillar structure overlying the first electrode member and a second copper pillar structure overlying the second electrode member
Implementation Method 3
fill the first region and the second region using a deposition process to form a first copper pillar structure overlying the first electrode member
Data Source
AI summary
A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.