Semiconductor Wafer Separation Using an Insulating Layer Buffer

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Solution Overview

Problem

Current semiconductor device manufacturing methods face challenges in efficiently separating semiconductor wafers into individual components without causing damage, particularly due to strong adhesion forces between the wafer and dicing tape, which can lead to reduced yield and increased complexity in processing.

Innovation Solution

A manufacturing method involving the formation of a first insulating layer on a ring-shaped convex area and a slope area of a semiconductor wafer, followed by applying dicing tape and cutting to separate the wafer into distinct members, with the insulating layer facilitating weak adhesion and reducing damage during peeling, thereby improving separability and yield.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If dicing tape is applied directly to the semiconductor wafer surface, then the wafer can be held securely during cutting, but the strong adhesion force causes damage during peeling and reduces yield

Engineering Contradiction:
Improveadhesion force between dicing tape and waferVSAvoidyield of semiconductor devices
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

A protective film is formed on the semiconductor wafer surface before applying the dicing tape. This preliminary action creates a buffer layer that prevents direct strong adhesion between the tape and the wafer, thereby reducing damage during the peeling process while maintaining secure holding during cutting operations.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The protective film acts as an intermediary layer between the dicing tape and the semiconductor wafer. It mediates the adhesion interaction by providing a surface that allows sufficient holding strength during cutting but reduces harmful adhesion forces during peeling, thus protecting the wafer from damage.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If the semiconductor wafer is thinned to desired thickness, then the device dimensions are improved, but the wafer becomes more vulnerable to damage during subsequent processing

Engineering Contradiction:
Improvethickness of semiconductor waferVSAvoidmechanical strength of wafer
Core Design Contradiction:
Manufacturing precisionVSStrength

Solution Approach 1:

The protective film is applied beforehand to the thinned wafer surface, providing cushioning protection during subsequent dicing and peeling operations. This cushioning layer compensates for the reduced mechanical strength of the thinned wafer, preventing breakage and damage during handling.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Productivity

If cutting is performed to separate the wafer into individual components, then productivity is improved, but damage occurs during separation due to strong adhesion

Engineering Contradiction:
Improveseparation efficiency of wafer componentsVSAvoidyield of semiconductor devices
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The protective film is formed on the wafer surface before the cutting and separation processes. This preliminary protection enables efficient separation into individual components while preventing damage that would otherwise occur due to strong adhesion between the dicing tape and the wafer surface.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The protective film serves as an intermediary that facilitates the separation process. It allows the dicing tape to be applied and removed during cutting operations while minimizing harmful interactions, thereby enabling high productivity without compromising device yield.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20250095999A1Manufacturing method for semiconductor device
Publication Date: 2025.03.20 KK TOSHIBA
  • US20250095999A1 patent drawing
  • US20250095999A1 patent drawing
  • US20250095999A1 patent drawing

AI summary

A manufacturing method for a semiconductor device according to an embodiment includes forming a first insulating layer on a ring-shaped convex area and a slope area of a semiconductor wafer which has a first surface and a second surface opposite to the first surface and has the ring-shaped convex area on a peripheral region of the first surface, a concave area on a central region of the first surface, and the slope area connecting the ring-shaped convex area and the concave area, providing a dicing tape on the semiconductor wafer on the first surface side, dividing the semiconductor wafer into a first member of the ring-shaped convex area and the slope area and a second member of the concave area by cutting the semiconductor wafer, and peeling off the first member of the ring-shaped area and the slope area from the dicing tape.