Warpage Adjusting Component in Semiconductor Package

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Solution Overview

Problem

The mismatch in Coefficients of Thermal Expansion (CTEs) between materials in semiconductor device packages leads to significant warpage, causing irregular joints and bump cracks, which adversely affects the packaging process yield.

Innovation Solution

Incorporating warpage adjusting components with a higher Young's modulus and lower CTE than the encapsulating material, disposed on second semiconductor devices, to reduce thermal expansion mismatch and improve the warpage profile, potentially using dummy dies or materials like silicon or glass.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If device dies are stacked vertically and horizontally onto redistribution structures using flip chip bonding, then the packaging density and integration are improved, but significant warpage occurs due to CTE mismatch between materials

Engineering Contradiction:
Improvepackaging densityVSAvoidwarpage
Core Design Contradiction:
ProductivityVSShape

Solution Approach 1:

The patent changes the physical state of the molding compound by controlling the reflow process parameters (temperature, time, atmosphere) to achieve optimal curing characteristics. This parameter optimization reduces excessive warpage while maintaining packaging density, resolving the contradiction between high integration and shape stability.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If molding compound is applied to cover device dies and solder balls, then the package is protected and encapsulated, but warpage is worsened due to asymmetrical arrangement of device dies

Engineering Contradiction:
Improvepackage protectionVSAvoidwarpage
Core Design Contradiction:
ReliabilityVSShape

Solution Approach 1:

The patent applies preliminary underfill material to the asymmetrical regions before applying the molding compound. This preliminary action compensates for the asymmetrical stress distribution, preventing excessive warpage while maintaining the protective encapsulation function of the molding compound.

Inventive Principle:
Principle #10Preliminary action

3Strength

If reflow is performed to melt solder balls for bonding, then the device dies are securely bonded to redistribution structure, but thermal expansion mismatch causes irregular joints and bump cracks

Engineering Contradiction:
Improvebonding strengthVSAvoidjoint regularity
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The patent optimizes reflow process parameters including peak temperature, dwell time, and cooling rate to control the thermal expansion and contraction cycles. This parameter control ensures strong bonding while minimizing thermal stress that causes joint irregularity and bump cracks.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces warpage and improves the packaging process yield by minimizing thermal expansion mismatch, allowing for a more stable and compact semiconductor device package without the need for additional space on the redistribution structure.

Implementation Method 1

there is significant mismatch between the Coefficients of Thermal Expansion (CTEs) of the materials in the packages

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 2

a reflow is performed to melt the solder balls that interconnect the dies and the redistribution structure

Methodology Applied
Scientific EffectMelting: Melting

Data Source

PatentUS11508710B2Method of forming semiconductor device package
Publication Date: 2022.11.22 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11508710B2 patent drawing
  • US11508710B2 patent drawing
  • US11508710B2 patent drawing

AI summary

A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.