Weakly Coupled Graphene Film Structure for Wide-Spectrum Light Absorption

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Solution Overview

Problem

Existing single-sheet graphene and traditional Schottky junctions have low light absorption and the hot electron-phonon scattering, and the relaxation time of hot electrons and the hot electron-phonon scattering, and the relaxation time of hot electrons and the hot electron-phonon scattering, which limits the efficiency of graphene-based photoelectric devices in detecting low-energy bands.

Innovation Solution

A graphene structure with weak coupling, featuring non-AB stacked regions and AB stacked regions, enhances the joint density of states, promoting light absorption and hot electron transition by increasing the occupation probability of high-energy states, and reduces the impact of defects through controlled lap gaps and vertical stacking.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If single-sheet graphene is used, then transparency is improved, but light absorption is insufficient

Engineering Contradiction:
Improvelight absorptionVSAvoidgraphene layer density
Core Design Contradiction:
Illumination intensityVSQuantity of substance

Solution Approach 1:

The patent transitions from two-dimensional single-sheet graphene to a three-dimensional vertically stacked graphene structure. Multiple graphene sheets are stacked vertically with controlled spacing (0.3-5 nm) to create a multi-layered architecture that increases light absorption path length and density while maintaining transparency through optimized inter-layer gaps.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent creates a composite structure combining multiple graphene sheets with different stacking configurations (AB-stacked and non-AB-stacked regions). This composite approach integrates the advantages of both ordered stacking (for structural stability) and disordered stacking (for enhanced light absorption and hot electron accumulation), achieving superior photoelectric performance.

Inventive Principle:
Principle #40Composite materials

2Stability of the object's composition

If AB-stacked graphene film is used, then structural stability is improved, but hot electron accumulation efficiency is reduced

Engineering Contradiction:
Improvestacking structure stabilityVSAvoidhot electron accumulation efficiency
Core Design Contradiction:
Stability of the object's compositionVSUse of energy by moving object

Solution Approach 1:

The patent implements spatially heterogeneous stacking structures where AB-stacked regions (providing structural stability) and non-AB-stacked regions (providing high hot electron accumulation efficiency) coexist within the same graphene film. This local quality variation allows different regions to fulfill different functional requirements simultaneously.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The graphene film is segmented into multiple stacking domains with different configurations. Rather than uniform stacking throughout, the structure is divided into AB-stacked segments and non-AB-stacked segments, each contributing different properties to the overall photoelectric performance.

Inventive Principle:
Principle #1Segmentation

3Manufacturing precision

If high-temperature treatment is applied, then defect structure is repaired, but device temperature increases

Engineering Contradiction:
Improvedefect repair qualityVSAvoiddevice operating temperature
Core Design Contradiction:
Manufacturing precisionVSTemperature

Solution Approach 1:

The patent performs high-temperature treatment during the manufacturing process to repair defects and optimize the stacking structure before device operation. This preliminary action ensures that the graphene film achieves its optimal structural state during fabrication, avoiding the need for continuous high-temperature operation during device use.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent controls the stacking distance parameter (0.3-5 nm) and stacking configuration (AB and non-AB regions) to optimize the balance between defect repair and temperature management. By adjusting these structural parameters, the material achieves high crystallinity and low defect density without requiring excessive operating temperatures.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The weakly coupled graphene structure improves light absorption across a wide spectrum, including visible and infrared bands, enhances hot electron transition, and extends the detection range, making it suitable for applications in military, medical, and consumer electronics, such as infrared detectors and multi-spectral imaging.

Implementation Method 1

improves light absorption across a wide spectrum, including visible and infrared bands

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Implementation Method 2

enhances hot electron transition, and extends the detection range

Methodology Applied
Scientific EffectHot electron transition: Photoelectric Effect

Data Source

PatentUS12421119B2Enhanced graphene structure based on weak coupling, graphene film, and photoelectric device
Publication Date: 2025.09.23 ZHEJIANG UNIV
  • US12421119B2 patent drawing
  • US12421119B2 patent drawing
  • US12421119B2 patent drawing

AI summary

A weakly coupled enhanced graphene film includes an enhanced graphene structure based on weak coupling, wherein the enhanced graphene structure based on weak coupling comprises a plurality of graphene units stacked vertically; the graphene unit is a single graphene sheet, or consists of two or more graphene sheets stacked in AB form; two vertically adjacent graphene units are weakly coupled, to promote the hot electron transition and increase the joint density of states, thereby increasing the number of hot electrons in high-energy states; the stacking direction of the graphene units in the graphene structure is in the thickness direction of the graphene film; and the graphene film enhances the accumulation of hot electrons in high-energy states by the enhanced graphene structure based on weak coupling.