Wide Band Gap Integration on SOI via Segmented Crystal Orientation
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Solution Overview
Problem
Conventional bulk Si CMOS processes face challenges in integrating high electron mobility transistor (HEMT) or hetero-junction bipolar transistor (HBT) devices due to difficulties in achieving good isolation at high frequency signals, limiting their integration into silicon-on-insulator (SOI) CMOS processes.
Innovation Solution
A semiconductor device structure is formed using a support substrate with a first crystal orientation, a trap rich layer, and an insulator layer, with a top surface layer having a second crystal orientation, allowing for the integration of transistors and wide band gap devices in separate regions, enhancing isolation and compatibility with SOI CMOS processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional bulk Si CMOS process is used to integrate HEMT or HBT devices, then device integration is attempted, but isolation between devices at high frequency signals cannot be achieved
Solution Approach 1:
The substrate is divided into multiple regions with different crystal orientations. First device regions have a first crystal orientation suitable for HEMT/HBT devices, while second device regions have a second crystal orientation suitable for CMOS devices. This segmentation allows each region to be optimized for its specific device type, achieving both integration and proper isolation characteristics.
Solution Approach 2:
Different regions of the substrate are assigned different crystal orientations to provide locally optimized properties. The first crystal orientation regions provide properties suitable for wide band gap devices (HEMT/HBT), while the second crystal orientation regions provide properties suitable for CMOS devices, allowing each local area to have the quality needed for its specific function.
2Adaptability or versatility
If HEMT or HBT devices are integrated into SOI CMOS process, then system-on-chip product is formed, but difficulty in achieving good isolation at high frequency signals remains
Solution Approach 1:
The integrated circuit substrate is segmented into first device regions with a first crystal orientation for HEMT/HBT devices and second device regions with a second crystal orientation for CMOS devices. This spatial segmentation enables each device type to operate in its optimized crystal orientation environment, achieving system-on-chip integration while maintaining proper high-frequency isolation through the inherent properties of the separated regions.
3Adaptability or versatility
If wide band gap material is integrated into Si CMOS process, then power amplifier and switch devices can be integrated, but isolation between devices cannot be achieved
Solution Approach 1:
The substrate implements local quality by assigning different crystal orientations to different regions. First device regions with the first crystal orientation are optimized for wide band gap power amplifier and switch devices, while second device regions with the second crystal orientation are optimized for CMOS circuitry. This local optimization enables both device types to coexist on the same substrate with proper isolation characteristics for each region's specific requirements.
Data Source
AI summary
Devices and methods for forming a device are presented. The method for forming the device includes providing a support substrate having first crystal orientation. A trap rich layer is formed on the support substrate. An insulator layer is formed over a top surface of the trap rich layer. The method further includes forming a top surface layer having second crystal orientation on the insulator layer. The support substrate, the trap rich layer, the insulator layer and the top surface layer correspond to a substrate and the substrate is defined with at least first and second device regions. A transistor is formed in the top surface layer in the first device region and a wide band gap device is formed in the second device region.