Active Cooling of Wide Bandgap Semiconductors Below 100°C
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Solution Overview
Problem
Wide bandgap semiconductor devices, such as SiC MOSFETs, experience increased conduction losses at higher temperatures and currents due to their strong positive temperature coefficient, which can lead to higher losses in high-voltage applications.
Innovation Solution
A power device comprising a wide bandgap semiconductor element with an active cooling system that lowers the junction temperature below 100°C using a refrigeration device, such as a vapor-compression refrigeration or Peltier element, to minimize conduction losses, especially at low switching frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If wide bandgap semiconductor devices operate at higher temperatures, then switching losses are reduced, but conduction losses increase due to positive temperature coefficient
Solution Approach 1:
The patent changes the temperature parameter of the semiconductor device by introducing active cooling systems. The cooling systems lower the junction temperature to ranges where conduction losses are minimized, thereby resolving the contradiction between switching losses and conduction losses by optimizing the operating temperature parameter.
Solution Approach 2:
The patent employs dynamic cooling systems that can adjust the cooling intensity based on operating conditions. This allows the device to maintain optimal temperature dynamically, balancing switching and conduction losses according to real-time operational requirements.
2Loss of energy
If active cooling systems are introduced to reduce conduction losses, then energy efficiency improves, but device complexity increases
Solution Approach 1:
The patent introduces cooling media (liquids or gases) as intermediaries to transfer heat away from the semiconductor devices. These media act as mediators between the heat-generating devices and the environment, enabling efficient heat removal without requiring direct complex thermal contact structures.
Solution Approach 2:
The patent replaces passive thermal management approaches with active cooling systems that use controlled fluid flow and heat exchange mechanisms. This substitution enables more precise temperature control and higher efficiency in removing conduction losses, justifying the increased complexity through performance gains.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cooling system effectively reduces conduction losses and enhances reliability and design tolerances by maintaining the semiconductor elements at optimal temperatures, reducing overall power device losses and improving performance in high-voltage applications.
Implementation Method 1
the cooling system comprises a refrigeration device for lowering a temperature of the cooling medium below an ambient temperature of the power device, wherein the cooling system is adapted for lowering the temperature of the cooling medium in such a way that a (junction) temperature of the wide bandgap semiconductor element is below 100° C.
Implementation Method 2
a refrigeration device, such as a vapor-compression refrigeration or Peltier element
Implementation Method 3
cooling the wide bandgap semiconductor element with the cooling medium such that a (junction) temperature of the wide bandgap semiconductor element is below 100° C.
Data Source
AI summary
A power device comprises at least one power semiconductor module comprising a wide bandgap semiconductor element; and a cooling system for actively cooling the wide bandgap semiconductor element with a cooling medium, wherein the cooling system comprises a refrigeration device for lowering a temperature of the cooling medium below an ambient temperature of the power device; wherein the cooling system is adapted for lowering the temperature of the cooling medium in such a way that a temperature of the wide bandgap semiconductor element is below 100° C.