Wide-Bandgap IGBT Structure With Backside Diode Integration
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Solution Overview
Problem
There is a need for improved structures and methods for forming insulated-gate bipolar transistors, particularly using wide bandgap semiconductor materials like silicon carbide, to enhance their performance and reliability in high-power and high-temperature applications.
Innovation Solution
A structure for an insulated-gate bipolar transistor is formed using a semiconductor substrate with a wide bandgap material, featuring a gate electrode at the front surface and a diode at the back surface, with specific doping regions and layers formed through ion implantation and high-temperature annealing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor materials are used for high-power applications, then device structure is simpler, but performance and reliability are insufficient at high temperatures and high voltages
Solution Approach 1:
The patent changes the fundamental material parameter by using wide bandgap semiconductor material instead of conventional semiconductor material. This parameter change enables the device to operate reliably at high temperatures and high voltages while maintaining a relatively simple structural configuration, thus resolving the contradiction between reliability and structural complexity
2Reliability
If wide bandgap semiconductor material is used, then device reliability and efficiency improve, but manufacturing complexity increases
Solution Approach 1:
The patent segments the device into distinct functional regions with specific doping configurations. The semiconductor substrate is divided into a first doped region and a second doped region, allowing independent optimization of each region's properties while simplifying the overall manufacturing process by treating them as separate fabrication steps
3Manufacturing precision
If high-temperature annealing is applied, then dopant activation and device performance improve, but processing complexity and energy consumption increase
Solution Approach 1:
The patent performs preliminary doping actions during the epitaxial growth process, where dopants are incorporated into the semiconductor layers as they are formed. This preliminary doping reduces the need for subsequent high-temperature annealing steps, as the dopants are already in their activated positions, thereby reducing energy consumption while maintaining manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enables the creation of high-reliability and high-efficiency insulated-gate bipolar transistors suitable for high-power applications, leveraging the advantageous properties of wide bandgap semiconductors.
Implementation Method 1
Wide bandgap semiconductors, such as silicon carbide, may be used in high-power applications and/or high-temperature applications. Silicon carbide is well suited for power switching because of advantageous properties, such as a high saturated drift velocity, a high critical field strength, an exceptional thermal conductivity, and a significant mechanical strength.
Implementation Method 2
specific doping regions and layers formed through ion implantation
Implementation Method 3
high-temperature annealing
Data Source
AI summary
Structures for an insulated-gate bipolar transistor and methods of forming a structure for an insulated-gate bipolar transistor. The structure comprises a semiconductor substrate having a front surface and a back surface opposite from the front surface. The semiconductor substrate comprises a wide bandgap semiconductor material. The structure further comprises a gate electrode at the front surface of the semiconductor substrate, and a diode at the back surface of the semiconductor substrate.