Wing-Trench Gate Structure for Mixed-Voltage Semiconductor Integration
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Solution Overview
Problem
Semiconductor devices face challenges in providing both low and high voltage transistors within a single device, particularly in applications requiring higher voltage levels, such as vehicle systems, where existing designs may lack structural stability during manufacturing processes.
Innovation Solution
The formation of a deep trench and a buried trench with a wing trench in the lower part, where the wing trench has a greater width than the buried trench, enhances structural stability and allows for the integration of high and low voltage transistors within a semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a deep trench and buried trench structure is formed with a wing trench having greater width than the buried trench, then structural stability during manufacturing is improved, but device complexity increases
Solution Approach 1:
The trench structure is segmented into three distinct components: a deep trench defining the active region, a buried trench extending vertically into the active region, and a wing trench formed through the lower part of the buried trench with greater width. This segmentation allows each component to serve specific functions - the deep trench provides isolation, the buried trench creates the transistor structure, and the wing trench enhances structural stability during manufacturing processes
Solution Approach 2:
The wing trench introduces a dimensional variation by extending laterally with greater width than the buried trench at the lower portion. This dimensional change in the horizontal direction provides additional structural support and stability during manufacturing while maintaining the vertical stacking arrangement of the trench system
2Adaptability or versatility
If high voltage transistor and low voltage transistor are integrated within a single semiconductor device, then adaptability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The semiconductor device employs local quality by creating different trench configurations for different voltage requirements. The deep trench with buried trench structure is used for high voltage transistors to provide adequate isolation and breakdown voltage, while the trench structure can be adjusted for low voltage transistors. This allows each region to have optimized characteristics for its specific voltage level
Solution Approach 2:
The trench formation process serves multiple functions: it defines active regions, provides electrical isolation, creates structural support, and enables both high voltage and low voltage transistor integration. The same basic trench formation methodology is used throughout the device, reducing the need for separate manufacturing processes for different voltage devices
Data Source
AI summary
A semiconductor device includes; an active region extending in a first horizontal direction on a substrate, source/drain regions disposed on the active region, a buried trench formed between the source/drain regions, a buried insulating layer surrounding both side walls of the buried trench in the first horizontal direction between the source/drain regions, a wing trench formed in a lower part of the buried trench and having a width greater than a width of the buried trench, and a gate electrode extending in a second horizontal direction on the active region, and disposed within each of the buried trench and the wing trench.