Wiring Substrate Intermediate Layer for Gas-Release Detachment Control
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Solution Overview
Problem
The detachment of redistribution layers during the manufacturing process of semiconductor devices can occur unintentionally due to gas generation within the release layer, particularly when moisture or low-molecular-weight components are present, leading to detachment issues at the interface between the release layer and the redistribution layer.
Innovation Solution
A wiring-substrate group is designed with an intermediate layer containing metal and openings to allow gas discharge, featuring a carrier substrate, release layer, and redistribution layers with conductive and insulating layers, where the intermediate layer has openings to prevent gas accumulation and facilitate controlled detachment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the release layer contains moisture or low-molecular-weight components to enable light-induced release, then the release function is improved, but gas generation occurs during heating steps causing unintended detachment
Solution Approach 1:
An intermediate layer is introduced between the release layer and the redistribution layer. This intermediate layer acts as a mediator that prevents direct contact between the release layer (containing moisture/low-molecular-weight components) and the redistribution layer, thereby blocking the path for gas-induced detachment while preserving the light-induced release function of the release layer.
Solution Approach 2:
The structure is segmented by dividing the interface between the release layer and redistribution layer into two separate interfaces: one between the release layer and intermediate layer, and another between the intermediate layer and redistribution layer. This segmentation isolates the gas generation issue to the release layer-intermediate layer interface, preventing gas from reaching and detaching the redistribution layer.
2Manufacturing precision
If high-temperature heating is applied to form the insulating layer, then the insulating layer formation is improved, but gas accumulates in the release layer causing detachment
Solution Approach 1:
The intermediate layer serves as a protective intermediary during the high-temperature heating process. It shields the redistribution layer from the thermal effects and gas generation in the release layer, allowing the insulating layer to be formed through heating without causing detachment at the redistribution layer interface.
Solution Approach 2:
The heating process that originally caused harmful gas accumulation is converted into a beneficial process for forming the insulating layer. The intermediate layer enables this by containing the gas generation to the release layer while allowing the necessary thermal processing to proceed for insulating layer formation.
3Device complexity
If the release layer is directly contacted with the redistribution layer, then the structure is simplified, but gas accumulation causes unintended detachment
Solution Approach 1:
The intermediate layer is positioned as a mediator between the release layer and redistribution layer. Although it adds a layer to the structure, it prevents the harmful direct contact that would allow gas to cause detachment, thereby improving reliability with minimal complexity increase.
Solution Approach 2:
The intermediate layer is strategically placed only where needed - at the interface between the release layer and redistribution layer. This localized placement provides the necessary protection against gas-induced detachment without unnecessarily complicating other parts of the structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively suppresses unintended detachment of redistribution layers by allowing gas release, maintaining structural integrity and facilitating controlled separation, thereby enhancing manufacturing reliability.
Implementation Method 1
the intermediate layer has openings to prevent gas accumulation and facilitate controlled detachment
Implementation Method 2
In the step of releasing the redistribution layer from the substrate, for example, the release layer is irradiated with light
Data Source
Figure 1~2
Figure 3~4
Figure 5A
AI summary
A wiring-substrate group includes a carrier substrate; a release layer including a first lower surface and a first upper surface, the first lower surface facing the carrier substrate, the first upper surface being located opposite the first lower surface, the release layer containing resin; an intermediate layer including a second lower surface and a second upper surface, the second lower surface facing the first upper surface, the second upper surface being located opposite the second lower surface, the intermediate layer containing metal; and a plurality of redistribution layers each including a third lower surface and a third upper surface, the third lower surface facing the second upper surface at least partially, the third upper surface being located opposite the third lower surface, the plurality of redistribution layers being aligned in a first direction. The redistribution layers each include a first wiring layer constituting the third lower surface. The first wiring layer includes electrically conductive layers and an insulating layer, the electrically conductive layers each containing a metal that is different from the metal of the intermediate layer, the insulating layer containing resin. The intermediate layer has an opening at which the first upper surface is exposed.