Word Line Buffer Structure for Uniform Recrystallization
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Solution Overview
Problem
Existing semiconductor devices, such as BCAT devices, suffer from short channel effects and other performance and stability issues due to non-uniform recrystallization of grains in the word function layer during thermal treatment, leading to void generation and adverse electrical performance.
Innovation Solution
The semiconductor device incorporates a word line structure with a buffer structure between the first and second work function layers, which reduces interface diversity and ensures uniform recrystallization of grains, thereby mitigating void generation and improving electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If thermal treatment is performed on the work function layer, then grain recrystallization occurs, but non-uniform recrystallization leads to void generation and adverse electrical performance
Solution Approach 1:
The buffer layer serves as a mediator between the work function layer and the gate dielectric layer during thermal treatment. It ensures uniform heat distribution and prevents direct interface contact that would lead to void formation, thereby achieving uniform grain recrystallization without harmful voids.
Solution Approach 2:
The buffer layer is positioned beforehand to cushion and distribute the thermal stresses during recrystallization. This prevents the formation of voids by providing a buffer zone that absorbs and distributes the forces generated during grain recrystallization.
2Adaptability or versatility
If the word line structure includes multiple work function layers with diverse interfaces, then functional requirements are met, but the extents of recrystallization of grains at different interfaces are non-uniform
Solution Approach 1:
The buffer layer is introduced at each interface between the work function layer and adjacent layers. This intermediary ensures that regardless of the diversity of interfaces, the buffer layer provides a consistent and uniform interface for grain recrystallization, maintaining stability while preserving the functional adaptability of the multi-layer work function structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The buffer structure ensures uniform forces on the interfaces during thermal treatment, preventing void formation and enhancing the electrical performance of the semiconductor device by simplifying the manufacturing process.
Implementation Method 1
the extents of recrystallization of grains in the word function layer at the interfaces between the work function layer and its adjacent layers or films can be relatively uniform
Implementation Method 2
performing a thermal treatment on the doped-polysilicon layer
Data Source
AI summary
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a word line structure. The semiconductor substrate has an active region. The word line structure is disposed in the active region of the semiconductor substrate. The word line structure includes a first work function layer, a second work function layer, and a buffer structure. The second work function layer is on the first work function layer. The buffer structure is between the first work function layer and the second work function layer.