Word Line Kick Voltage for Faster Non-Volatile Memory Sensing
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Solution Overview
Problem
Existing non-volatile semiconductor memory technologies, such as EEPROM and flash memory, face delays in sensing operations due to the need for multiple read reference voltages to accurately read and program memory cells, which increases overall sensing time.
Innovation Solution
Applying a kicking voltage to a selected word line during sensing operations helps the voltage stabilize quickly, reducing the time delay before bit lines can be sensed by facilitating faster propagation of reference voltages along the word line.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple read reference voltages are applied to determine memory cell states, then measurement precision is improved, but loss of time increases
Solution Approach 1:
The patent applies preliminary action by pre-charging bit lines to a reference voltage level before the actual sensing operation. This preliminary voltage establishment on bit lines reduces the time required during the actual sensing phase, allowing faster determination of memory cell states while maintaining measurement precision through the pre-established reference conditions
Solution Approach 2:
The patent implements skipping by using a kicked word line voltage that rapidly transitions through intermediate voltage levels to reach the target reference voltage. This accelerated voltage transition on the word line skips the gradual charging process, reducing the time delay before bit lines can be sensed while still achieving the necessary voltage stability for accurate measurement
2Measurement precision
If voltage stabilization time is extended on word line, then measurement precision is improved, but productivity decreases
Solution Approach 1:
The patent uses a kicked word line voltage that rapidly transitions through intermediate levels to reach the target reference voltage, skipping the gradual charging process. This accelerated transition achieves voltage stability faster, allowing bit lines to be sensed sooner while maintaining the necessary voltage stability for accurate measurements
Solution Approach 2:
The patent employs periodic action through controlled voltage transitions on the word line, using a kick voltage that is applied in a specific time sequence to rapidly establish the reference voltage level. This periodic voltage application pattern achieves stable conditions faster than continuous gradual charging, improving sensing operation speed while maintaining measurement precision
Data Source
AI summary
Methods and devices for sensing non-volatile storage are disclosed. Technology disclosed herein reduces the time for sensing operations of non-volatile storage such as read and program verify. In one embodiment, a kicking voltage is applied to a selected word line during a sensing operation. The kicking voltage may be applied to one end of a selected word line during a transition from a first reference voltage to a second reference voltage. The kicking voltage may help the other end of the word line reach the second reference voltage quickly. Since the bit lines can be sensed after the selected word line has reached the target reference voltage, the time delay prior to sensing of the bit lines may be reduced.