Word Line Driving Method Using Offset Pulse for Nonvolatile Memory
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional nonvolatile memory devices experience significant word line setting time delays due to the distance between the voltage generation circuit and the word line, affecting overall performance and operation efficiency.
Innovation Solution
The implementation of an offset pulse with a level higher or lower than the target pulse for a predetermined time before applying the target pulse to the word line, reducing the word line loading time and optimizing performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the voltage generation circuit is placed at a distance from the word line, then the device layout flexibility is improved, but the word line setting time increases
Solution Approach 1:
The patent applies preliminary action by generating an offset pulse before the target pulse to pre-charge or pre-discharge the word line. This preliminary voltage adjustment reduces the time required for the word line to reach its target voltage level, thereby shortening the word line setting time while allowing the voltage generation circuit to be positioned flexibly in the device layout.
2Loss of time
If an offset pulse is applied to the word line, then the word line setting time is reduced, but the circuit complexity increases
Solution Approach 1:
The patent implements multi-functionality by designing the voltage generation circuit to generate multiple types of pulses (offset pulse and target pulse) using the same circuit components. The offset pulse generator and target pulse generator share common circuit architecture, allowing the circuit to perform both preliminary voltage adjustment and final voltage setting functions without significantly increasing overall circuit complexity.
3Speed
If the offset pulse level is adjusted to optimize word line setting time, then the operation speed is improved, but the control complexity increases
Solution Approach 1:
The patent applies parameter changes by adjusting the offset pulse voltage level and duration as configurable parameters to optimize word line setting time. The control logic receives configuration information that specifies the offset pulse characteristics, allowing the system to adapt to different operating conditions and memory cell types without requiring complex control circuits. The offset amount and pulse width can be tuned to achieve optimal performance for different scenarios.
Data Source
AI summary
A word line driving method is for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings which is formed in a direction perpendicular to a substrate and connected between bit lines and a common source line. The method includes applying an offset pulse to a word line for a predetermined time to shorten a word line setting time, and applying a target pulse having a level which is higher or lower than a level of the offset pulse to the word line after the predetermined time.