Word-Line Self-Refresh Control for Faster Memory Wake-Up
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Solution Overview
Problem
Existing memory devices face challenges in reducing power consumption during self-refresh operations due to the need to wait for a predetermined time after exiting self-refresh before processing valid commands, which prolongs the time from exit self-refresh to valid commands.
Innovation Solution
The memory device is designed to perform self-refresh operations in units of individual word lines, allowing it to stop refresh on specific word lines and process commands immediately, thereby reducing power consumption and shortening the time required to transition from self-refresh to valid commands.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the memory device performs self-refresh operations on all word lines, then data retention is ensured, but power consumption increases and transition time to valid commands is prolonged
Solution Approach 1:
The memory device segments the self-refresh operation into individual word line units. The self-refresh circuit can selectively perform refresh operations on specific word lines (e.g., first word line) while stopping refresh on other word lines (e.g., second word line) when a self-refresh exit signal is detected, allowing partial refresh to maintain critical data while reducing overall power consumption.
Solution Approach 2:
The self-refresh circuit dynamically adjusts its operation based on detected signals. When a self-refresh exit signal is detected during self-refresh operations, the circuit dynamically stops refresh on subsequent word lines while continuing or completing refresh on current word lines, enabling adaptive power management that responds to real-time operational needs.
2Reliability
If the memory device completes all self-refresh operations before processing commands, then data integrity is maintained, but the time from exit self-refresh to valid commands is prolonged
Solution Approach 1:
The memory device performs preliminary refresh actions on critical word lines before the self-refresh exit signal is fully processed. When a self-refresh exit signal is detected, the circuit continues or completes refresh on the current word line while stopping refresh on subsequent word lines, allowing command processing to begin sooner while ensuring critical data remains refreshed.
Solution Approach 2:
The self-refresh circuit dynamically transitions from completing all refresh operations to stopping refresh on specific word lines based on the self-refresh exit signal timing. This dynamic adjustment allows the device to balance data integrity with faster response time to valid commands.
3Use of energy by moving object
If the memory device enters self-refresh mode during longer idle times, then power consumption is reduced, but the ability to respond quickly to valid commands is diminished
Solution Approach 1:
The self-refresh circuit operates dynamically, allowing entry into self-refresh mode during idle periods to reduce power consumption, but can be quickly exited by stopping refresh on subsequent word lines when valid commands are detected, enabling fast transition from low-power mode to active operation.
Data Source
AI summary
A memory device is provided. The memory device includes: a first memory cell array including a first row and a second row, and a self-refresh circuit configured to control refresh in response to a first self-refresh entry signal, and stop refresh of the second row after refreshing the first row in response to a self-refresh exit signal.