Wordline Power Support Circuits for Reliable Vertical Flash Programming

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Solution Overview

Problem

The increasing number of wordlines in vertical flash memory devices leads to higher current demands, which can result in insufficient power supply during program and read operations, potentially causing errors.

Innovation Solution

A memory device that supplements power by using a control block to manage multiple external supply powers, including a voltage regulator that switches to an on-state to generate additional power when current from a lower supply power falls below a threshold, ensuring adequate power is provided to all wordlines.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the number of wordlines is increased to improve storage capacity, then the storage capacity is improved, but the current demand increases causing power supply insufficiency

Engineering Contradiction:
Improvestorage capacityVSAvoidpower supply sufficiency
Core Design Contradiction:
Quantity of substanceVSPower

Solution Approach 1:

The power supply system is segmented into multiple independent power sources (first external supply power and second external supply power) that can be independently controlled and combined. The control block separately manages power distribution to different wordline groups, allowing flexible power allocation to meet the increased current demands of higher-capacity devices with more wordlines.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The system dynamically changes power supply parameters by adjusting the contribution level of each external power source based on detected current demands. The control block monitors current consumption and modifies the power output ratios between the first and second external supply powers, enabling the system to adapt to varying power requirements as wordline counts increase.

Inventive Principle:
Principle #35Parameter changes

2Power

If multiple external supply powers are used to meet current demand, then the power supply capability is improved, but the device complexity increases

Engineering Contradiction:
Improvepower supply capabilityVSAvoidpower management complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The control block implements self-service power management by automatically detecting current consumption levels and autonomously adjusting the power output ratios between the first and second external supply powers. The system monitors its own power requirements and makes real-time adjustments without external intervention, reducing the complexity of external power management while maintaining adequate power supply capability.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

A feedback mechanism is implemented where the control block continuously monitors the current consumption of the memory device and uses this information to dynamically adjust the power output of each external supply power source. This closed-loop control simplifies power management by allowing the system to self-regulate based on actual demand, reducing the need for complex external power coordination.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Ensures stable program and read operations by maintaining sufficient power levels, preventing errors due to current shortages in the memory device.

Implementation Method 1

a voltage regulator, which regulates the first external supply power to output the first internal power and the second internal power

Methodology Applied
Scientific EffectVoltage regulation:

Data Source

PatentUS12537058B2Memory devices having built-in power supporting control circuits that provide increased program and read reliability
Publication Date: 2026.01.27 SAMSUNG ELECTRONICS CO LTD
  • US12537058B2 patent drawing
  • US12537058B2 patent drawing
  • US12537058B2 patent drawing

AI summary

A memory device includes an array of nonvolatile memory cells and a wordline voltage generator configured to drive: a selected word line within the array with a program voltage, a word line extending immediately adjacent the selected word line with a first voltage during the program operation, and an unselected word line within the array with a second voltage having a magnitude less than a magnitude of the first voltage, during a memory cell program operation. A control block is provided, which drives the wordline voltage generator with a first internal power signal having a first magnitude, in response to a first external supply power signal, drives the wordline voltage generator with a second internal power signal having a second magnitude less than the first magnitude, and selectively redirects power from the first external supply power signal to the second internal power signal, in response to detecting a reduction in current and/or voltage associated with the second external power signal that exceeds a threshold amount.