Write Data Mask Signal Circuit for Gapless Write Operations
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Solution Overview
Problem
Conventional synchronous memory devices face limitations in high-speed operations due to improper generation of write data mask signals, particularly in gapless write operations, which restrict their performance in high-performance memory systems.
Innovation Solution
A circuit and method for generating a write data mask signal in a synchronous memory device, featuring a reset control unit that detects gapless write operations and maintains the internal write data mask signal active during such operations, using a write column disable signal to reset the signal only at the appropriate end point, ensuring seamless transition between write and read operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the conventional write data mask signal generating circuit resets the internal write data mask signal using a read signal or write column disable signal, then the circuit can perform individual write data mask operations, but it cannot properly generate the write data mask signal for gapless write operations, causing operation failures and performance restrictions
Solution Approach 1:
The patent introduces a dynamic control mechanism where the reset signal generation is conditional based on the operation type. The circuit dynamically adjusts its behavior by detecting whether a gapless write operation is being performed, and only generates the reset signal when appropriate (i.e., when not in gapless write mode), thereby resolving the contradiction between maintaining operational reliability and achieving high-speed gapless writes
Solution Approach 2:
The patent introduces a gapless write operation detection circuit as an intermediary element that monitors the operation state and controls the reset signal generation. This intermediary detection mechanism enables the system to distinguish between individual write operations (where reset is needed) and gapless write operations (where reset should be suppressed), thereby ensuring reliable operation across both modes
2Ease of operation
If the circuit uses a read signal delayed from an externally applied read command as the reset signal, then the read operation can be triggered, but the internal write data mask signal cannot be timely reset during gapless write operations, requiring additional signals and complicating the control logic
Solution Approach 1:
The circuit achieves self-service by using its own internal operation state (detected by the gapless write operation detection circuit) to control the reset signal generation. Instead of relying on external read signals or additional write column disable signals, the circuit autonomously determines when resetting is appropriate based on its current operation mode, thereby simplifying control logic and eliminating timing delays
Data Source
AI summary
A circuit for generating a write data mask signal in a synchronous semiconductor memory device includes an output unit and a reset control unit. The output unit controls a write data mask operation of the synchronous semiconductor memory device, latches a write data mask signal, and outputs an internal write data mask signal, in response to an internal clock signal. The reset control unit generates a reset signal for resetting the internal write data mask signal, in response to a write column disable signal indicating an activation end point of a column selection line signal generated when a write operation including the write data mask operation is performed. While the synchronous semiconductor memory device performs a gapless write data mask operation included in a gapless write operation, the reset signal is deactivated so that the write data mask signal is not reset.