X-ray Imaging Panel Terminal Integration via Shared Process Steps
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Solution Overview
Problem
Existing X-ray imaging devices face challenges in productivity and manufacturing costs due to the complexity of forming terminals for thin film transistors (TFTs) and photodiodes, which are not efficiently integrated with the active imaging area.
Innovation Solution
An X-ray imaging panel design that incorporates a substrate with both an active area for thin film transistors and a terminal area, where the terminal area is formed using the same materials and processes as the active area, including a photoelectric conversion element and conductive layers, allowing for simultaneous production without additional steps, thereby improving productivity and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If terminals are formed separately from the active area, then terminal connections can be established, but productivity decreases and manufacturing costs increase due to additional production steps
Solution Approach 1:
The patent merges the terminal area formation with the active area formation processes. The same thin film transistor formation steps, insulating film deposition, and conductive layer patterning are used for both regions, eliminating separate terminal production steps while ensuring reliable electrical connections through integrated process design
Solution Approach 2:
The patent applies universal formation processes that serve multiple functions: the same semiconductor layer deposition, insulating film formation, and conductive layer patterning processes create both the active imaging pixels and the terminal connections, allowing one process suite to fulfill multiple manufacturing objectives
2Reliability
If terminals are formed using separate processes, then proper terminal structures can be created, but manufacturing costs increase due to additional process steps
Solution Approach 1:
The patent combines terminal structure formation with active area structure formation using identical material deposition and patterning processes. The same insulating films, semiconductor layers, and conductive materials are deposited and patterned for both regions simultaneously, eliminating the need for separate terminal-specific manufacturing steps and reducing overall production costs
3Reliability
If additional production steps are added for terminal formation, then terminal connections can be ensured, but the number of production steps increases reducing productivity
Solution Approach 1:
The patent merges terminal formation into the existing active area production sequence. The same chronologically ordered steps—semiconductor layer deposition, insulating film formation, conductive layer patterning, and etching—are applied to both terminal and active regions, ensuring reliable connections without adding process steps or increasing production complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances productivity and reduces manufacturing costs by allowing the terminal area to be produced in parallel with the active area, ensuring efficient integration and reliable connections without increasing the number of production steps.
Implementation Method 1
a photoelectric conversion element provided on the first insulating film, the photoelectric conversion element including a first semiconductor layer of a first conductive type, an intrinsic amorphous semiconductor layer, and a second semiconductor layer of a second conductive type that is opposite to the first conductive type, as a photoelectric conversion layer that converts the scintillation light into charges
Data Source
AI summary
An imaging panel generates an image based on scintillation light that is obtained from X-rays transmitted through an object. The imaging panel includes, in a terminal area, a terminal-first insulating film that is made of the same material as that of a first insulating film on a TFT, and is separated on a part of a first conductive layer so as to have an opening; a terminal-semiconductor layer is provided above the terminal-first insulating film, and is made of the same material as that of at least a part of semiconductor layers of a photoelectric conversion layer; and a second conductive layer made of the same material as that of a conductive film connected with a photoelectric conversion element, is provided on the terminal-semiconductor layer so as to be in contact with the first conductive layer in the opening.