Yttrium Monoxide Film Deposition via DC Magnetron Sputtering
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Solution Overview
Problem
There is a lack of reported methods for depositing semiconducting yttrium monoxide (YO) thin films using DC magnetron sputtering, despite its potential in microelectronic and superconducting applications, with most studies focusing on pulsed laser deposition methods.
Innovation Solution
A novel method involving reactive DC magnetron sputtering is developed to deposit yttrium monoxide thin films on substrates, involving positioning a substrate in a vacuum chamber with a magnetron and yttrium source, introducing a process gas mixture of Ar and O2, and controlling oxygen partial pressure and temperature to achieve semiconducting behavior.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If pulsed laser deposition method is used to deposit yttrium monoxide, then film deposition can be achieved, but the method complexity and equipment requirements increase
Solution Approach 1:
The patent replaces the complex pulsed laser deposition system with a simpler DC magnetron sputtering system. This substitution maintains the ability to deposit high-quality yttrium monoxide films while significantly reducing equipment complexity and operational cost. The magnetron sputtering method uses magnetic fields to enhance sputtering efficiency rather than requiring expensive excimer lasers.
Solution Approach 2:
The patent changes the deposition method from laser-based to sputtering-based, altering the fundamental physical parameters of the deposition process. By controlling oxygen partial pressure (1×10^-3 to 1×10^-6 mbar) and using reactive sputtering with Ar+O2 gas mixture, the method achieves YO film deposition through chemical reactions during sputtering rather than direct laser ablation.
2Stability of the object's composition
If oxygen partial pressure is increased during deposition, then oxide formation is enhanced, but semiconducting properties of yttrium monoxide deteriorate
Solution Approach 1:
The patent identifies and controls the critical oxygen partial pressure parameter to achieve the desired balance. By maintaining oxygen pressure in the range of 1×10^-3 to 1×10^-6 mbar during DC magnetron sputtering, the process forms sufficient oxide for compositional stability while preventing excessive oxidation that would create insulating Y2O3 and destroy semiconducting properties. This narrow pressure window is the key parameter control strategy.
Solution Approach 2:
The patent employs monitoring techniques including optical emission spectroscopy and residual gas analysis to provide feedback on the deposition process. This allows real-time adjustment of oxygen partial pressure and other parameters to maintain the delicate balance between oxide formation and semiconducting property preservation throughout the deposition process.
3Shape
If deposition temperature is increased, then film crystallinity is improved, but control over semiconducting behavior becomes more difficult
Solution Approach 1:
The patent explores the relationship between deposition temperature and film properties by varying temperature during deposition. Higher temperatures promote crystalline phase formation which improves film structure, but the patent carefully controls temperature alongside oxygen partial pressure to prevent excessive crystallization that would form insulating phases. The optimal temperature range is identified to achieve sufficient crystallinity while maintaining semiconducting characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method successfully produces yttrium monoxide thin films with semiconducting properties, characterized by XRD, XPS, and electrical measurements, demonstrating optimal oxygen partial pressure for semiconducting behavior and varying crystallinity depending on substrate and temperature.
Implementation Method 1
operating the magnetron to sputter yttrium particles from the yttrium source for coating the substrate surface
Implementation Method 2
withdrawing and depleting gas from the vacuum chamber and creating process pressure between 1×10^-3 and 1×10^-6 mbar
Data Source
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AI summary
The invention relates to nanocoatings, more particularly, to nanocoatings deposited by plasma vacuum technologies and having semi-conducting properties. The proposed method for deposition of yttrium monoxide film on a substrate by reactive magnetron sputtering, comprising the following steps: (i) positioning a substrate in a vacuum chamber having a magnetron and yttrium source for sputtered particles and a process gas shroud means for partially enveloping the magnetron, the substrate having a surface facing the source; (ii) operating the magnetron to sputter yttrium particles from the yttrium source for coating the substrate surface, including introducing a process gas to the shroud means; (iii) withdrawing and depleting gas from the vacuum chamber and creating process pressure between 1×10-3 and 5×10-3 Torr with 1.40×10-8 - 1.74×10-5 Torr oxygen partial pressure by inletting the process gases and continuing sputtering yttrium particles from the yttrium source; as soon as the desired thickness of coating on the substrate surface is reached, disactivating the magnetron. According to the preferred embodiment sputtering of yttrium particles from the yttrium source at the (ii) step is made at the temperature from 290 to 630 K. According to another embodiment, the substrate at the step (i) is positioned so that its surface facing the source is located at an angle 30-70° to the magnetron and yttrium source. The novel coating structure is also proposed, comprising a substrate and yttrium monoxide coating layer disposed on the substrate, wherein the thickness of the yttrium monoxide coating layer is from 297 to 448 nm, wherein the substrate is selected from the group consisting of glass, polymer and metal.