Conformal Yttrium Oxide Coating for Corrosion-Resistant Semiconductor Parts
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional coating technologies for semiconductor processing components fail to provide adequate protection against corrosion and erosion due to limitations in thickness, uniformity, and material properties, leading to increased downtime and replacement costs.
Innovation Solution
A method involving plasma electrolytic oxidation with controlled pulsing and an alkaline electrolyte is used to form a dense, yttrium-containing oxide coating on semiconductor components, which includes a composite yttrium-aluminum monoclinic structure, providing enhanced hardness and dielectric breakdown voltage, and is applied conformally across complex geometries.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional coating technologies are used, then coating can be applied to semiconductor components, but the coating provides inadequate protection against corrosion and erosion due to limitations in thickness, uniformity, and material properties
Solution Approach 1:
The patent applies plasma electrolytic oxidation with controlled pulsing parameters (on-time, off-time, voltage, current density) to transform the coating formation process. By dynamically adjusting electrical parameters during plasma treatment, the method achieves superior coating uniformity and thickness control while enhancing protective properties. The pulsed plasma regime allows precise control over oxide layer growth, resolving the contradiction between reliability and manufacturing precision.
Solution Approach 2:
The patent creates a composite coating structure through plasma electrolytic oxidation that combines metal substrate with ceramic oxide layers. This composite structure integrates the strength and adhesion of the metal substrate with the corrosion and erosion resistance of ceramic oxides, achieving superior protection while maintaining coating uniformity through controlled plasma processing.
2Reliability
If coating thickness is increased to improve protection, then corrosion and erosion resistance improves, but coating uniformity and surface quality deteriorate
Solution Approach 1:
The patent employs periodic pulsed plasma treatment with defined on-times and off-times during the coating process. This periodic action allows controlled oxide growth during plasma on-periods followed by stabilization during off-periods, enabling formation of thick, uniform coatings with controlled surface roughness. The pulsed regime prevents uncontrolled growth that would lead to surface deterioration while maintaining protective thickness.
3Reliability
If plasma treatment time is extended to improve coating quality, then material properties improve, but processing time and productivity decrease
Solution Approach 1:
The patent uses high-frequency pulsed plasma treatment where short on-periods (microseconds to milliseconds) alternate with off-periods. This periodic action delivers high power density during treatment to rapidly form high-quality coatings with superior material properties, while the short total cycle time maintains high productivity. The pulsed regime is significantly faster than continuous plasma treatment while achieving equal or superior coating quality.
Solution Approach 2:
The patent implements dynamic control of plasma parameters during treatment, adjusting voltage, current density, and pulse timing in real-time based on coating formation stage. This dynamic approach optimizes material property development at each stage of coating formation, achieving high-quality coatings faster than static, fixed-parameter processes by adapting treatment intensity to instantaneous coating state.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method produces coatings with increased thickness and improved material properties, extending component lifespan and reducing degradation, allowing for more efficient semiconductor processing with reduced maintenance.
Implementation Method 1
igniting a plasma at a surface of the semiconductor component substrate
Implementation Method 2
forming a yttrium-containing oxide on the semiconductor component substrate
Implementation Method 3
submerging the semiconductor component substrate in an alkaline electrolyte. The alkaline electrolyte may include yttrium
Data Source
AI summary
Exemplary methods of coating a semiconductor component substrate may include submerging the semiconductor component substrate in an alkaline electrolyte. The alkaline electrolyte may include yttrium. The methods may include igniting a plasma at a surface of the semiconductor component substrate for a period of time less than or about 12 hours. The methods may include forming a yttrium-containing oxide on the semiconductor component substrate. A surface of the yttrium-containing oxide may be characterized by a yttrium incorporation of greater than or about 10 at. %.