Yttrium Oxyfluoride Sintered Material for Plasma Corrosion Resistance
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Solution Overview
Problem
Semiconductor manufacturing processes, particularly in plasma apparatuses, face challenges with corrosion due to chemical and physical actions of etching gases, leading to particle generation and reduced plasma resistance, which existing materials like Y2O3 do not adequately address.
Innovation Solution
A sintered material comprising 50 mass% or more of yttrium oxyfluoride with a relative density of 97.0% or more and a Vickers hardness of 5.0 GPa or more, optionally including yttrium fluoride, is developed using methods like atmospheric pressure sintering or spark plasma sintering, to enhance corrosion resistance and plasma resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If Y2O3 is used as a corrosion-resistant material, then chemical corrosion resistance is improved, but physical corrosion resistance and plasma resistance deteriorate due to particle generation
Solution Approach 1:
The patent uses Y5O4F7 (yttrium oxyfluoride) as a composite material that combines the chemical corrosion resistance of rare earth oxides with enhanced physical durability. This single-phase ceramic material provides both chemical inertness against halogen-based etching gases and resistance to physical corrosion from plasma sputtering, eliminating particle generation issues while maintaining corrosion protection.
Solution Approach 2:
The patent changes the material composition parameter from Y2O3 to Y5O4F7, which has different chemical and physical properties. Y5O4F7 contains fluorine atoms that create a more stable surface layer resistant to both chemical reactions and physical sputtering, thereby improving plasma resistance while maintaining chemical corrosion resistance.
2Object-affected harmful factors
If dense sintered material is obtained with 99.0% or more relative density, then corrosion resistance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent changes the sintering temperature parameter to 900°C or higher, which enables achieving 99.0% or more relative density with reduced manufacturing complexity. This temperature threshold triggers complete densification and phase formation, simplifying the overall manufacturing process while achieving the required high density for corrosion resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sintered material significantly reduces chemical and physical corrosion, minimizes particle generation, and maintains low dielectric dissipation factors, ensuring stable plasma uniformity and reduced heat generation, thus improving the performance and reliability of semiconductor manufacturing apparatuses.
Implementation Method 1
Corrosion by chemical action proceeds mainly by a chemical reaction with an etching gas. Radicals generated by activation of the etching gas by plasma cause a chemical reaction with members in a chamber, leading to corrosion.
Implementation Method 2
corrosion by physical action mainly proceeds by sputtering action by an etching gas. The etching gas is ionized by plasma, and the ions collide with the member in the chamber by a potential difference and sputter the member in the chamber
Implementation Method 3
The sintered material significantly reduces chemical and physical corrosion, minimizes particle generation
Implementation Method 4
maintains low dielectric dissipation factors, ensuring stable plasma uniformity and reduced heat generation
Data Source
AI summary
Provided are a sintered material having high corrosion resistance, a method of manufacturing the sintered material, a member for a semiconductor manufacturing apparatus, a method of manufacturing a member for a semiconductor manufacturing apparatus, a semiconductor manufacturing apparatus, and a method of manufacturing a semiconductor manufacturing apparatus. The sintered material according to an embodiment includes 50 mass% or more of yttrium oxyfluoride, has a relative density of 97.0% or more, and has a Vickers hardness of 5.0 GPa or more. The method of manufacturing a sintered material according to an embodiment includes forming a molded body including yttrium oxyfluoride powder having a particle size of 0.3 µm or less, and sintering the molded body under an atmospheric pressure at a temperature of 800° C. or less.