Zigzag Semiconductor Channel Structure for Higher Integration
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Solution Overview
Problem
Existing semiconductor devices, such as FinFET and MBCFET, face limitations in further reducing their size for advanced miniaturization.
Innovation Solution
A semiconductor device with a zigzag structure, known as ZACFET, is developed, featuring semiconductor layers extending in a zigzag pattern from the substrate, allowing for adjustable channel width and high integration through a manufacturing process involving sacrificial layers and epitaxial growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If FinFET or MBCFET structures are used to achieve miniaturization, then device integration is improved, but further size reduction is limited
Solution Approach 1:
The patent transitions from conventional planar or vertical FinFET structures to a zigzag channel structure that combines lateral and vertical dimensions. The semiconductor layer extends in a zigzag pattern with alternating horizontal and vertical segments, creating a three-dimensional path that increases effective channel length without proportionally increasing footprint area, thereby achieving higher integration density
Solution Approach 2:
The semiconductor layer is divided into multiple segments including first portions extending horizontally and second portions extending vertically. These segments are connected in sequence to form the zigzag pattern, allowing independent optimization of each segment's dimensions and enabling precise control over the overall device footprint and effective channel length
2Reliability
If channel width is adjusted to optimize performance, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent enables adjustment of the channel width parameter by modifying the width of the first portions in the zigzag structure. Since the channel width is defined by the horizontal segments rather than the vertical height, this parameter can be independently optimized for performance while the vertical dimension maintains the same manufacturing processes, thus improving performance without proportionally increasing manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The zigzag structure enables high performance and high integration capabilities by allowing for adjustable channel width without altering the vertical height, enhancing device performance and integration.
Implementation Method 1
a manufacturing process involving sacrificial layers and epitaxial growth
Data Source
AI summary
A semiconductor device having a zigzag structure, a method of manufacturing the semiconductor device, and an electronic including the semiconductor device. The semiconductor device may include a semiconductor layer (1031) extending in zigzag in a vertical direction with respect to a substrate (1001). The semiconductor layer (1031) includes one or more first portions disposed in sequence and spaced apart from each other in the vertical direction and second portions respectively disposed on and connected to opposite ends of each first portion. A second portion at one end of each first portion extends from the one end in a direction of leaving the substrate, and a second portion at the other end of the each first portion extends from the other end in a direction of approaching the substrate. First portions adjacent in the vertical direction are connected to each other by the same second portion.