Zirconium Indium Oxide Thin Film Transistor Solution Process
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional metal oxide thin film transistors, such as those using indium gallium zinc oxide (IGZO), face challenges with high production costs due to expensive vacuum-based physical vapor deposition methods and low mobility when manufactured using solution processes, which introduce impurities.
Innovation Solution
A method for manufacturing thin film transistors using a zirconium indium oxide semiconductor material by a solution process, specifically ink jet printing, with zirconium atoms comprising 0.1-20% of the total indium and zirconium atoms, and an etching barrier layer to prevent exposure to air and impurities, allowing for high mobility and low production costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If physical vapor deposition method is used to manufacture metal oxide thin film transistor, then manufacturing precision and mobility are improved, but production cost increases and ease of manufacture deteriorates
Solution Approach 1:
The patent changes the manufacturing method from physical vapor deposition to solution process, and modifies the material composition by adding zirconium to form IGZO. This parameter change allows achieving high mobility (10-50 cm²/Vs) through solution process with lower production cost and higher ease of manufacture
Solution Approach 2:
The patent uses composite material IGZO (indium gallium zinc oxide with zirconium addition) instead of conventional amorphous silicon or simple metal oxide. The composite material structure with specific atomic ratios (In:Ga:Zn:O = 1:(0.1-0.5):(0.1-0.5):(2.5-3.0)) enables high mobility while being compatible with low-cost solution processing
2Ease of manufacture
If solution process is used to manufacture metal oxide thin film transistor, then ease of manufacture and production cost are improved, but mobility deteriorates due to impurity introduction
Solution Approach 1:
The patent changes the material composition parameters by adding zirconium element to form IGZO with optimized atomic ratios. This parameter change suppresses impurity effects and enables high mobility (10-50 cm²/Vs) to be achieved through solution process while maintaining low production cost
Solution Approach 2:
The patent employs solution process with inexpensive precursors and simple processing steps instead of expensive vacuum equipment. The method uses low-cost materials and processes that can be easily disposed of or replaced, achieving high mobility transistors at lower production cost
3Ease of manufacture
If conventional amorphous silicon is used for thin film transistor, then ease of manufacture is maintained, but mobility is insufficient for large displays and high drive frequencies
Solution Approach 1:
The patent replaces conventional amorphous silicon with composite metal oxide material IGZO. The composite material structure with multiple elements (In, Ga, Zn, O, and Zr) provides superior electrical properties with mobility 10-50 cm²/Vs while maintaining compatibility with existing manufacturing processes
Solution Approach 2:
The patent changes the semiconductor material type from amorphous silicon to metal oxide IGZO, and optimizes the atomic composition ratios. This parameter change achieves the required mobility for large displays and high drive frequencies while maintaining ease of manufacture through solution processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution process enables the production of metal oxide thin film transistors with high mobility and reduced sensitivity to impurities, meeting the demands of larger displays and higher drive frequencies while maintaining low production costs.
Implementation Method 1
the industrialized metal oxide thin film transistors are mainly prepared by a physical vapor deposition (PVD) method
Implementation Method 2
a solvent in the solution is evaporated by an evaporation process to form the active layer
Data Source
AI summary
A method for manufacturing a thin film transistor is disclosed. The method includes: manufacturing a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode on a substrate. The active layer is formed from a zirconium indium oxide semiconductor material by a solution process. A thin film transistor, an array substrate, a method for manufacturing an array substrate, a display panel and a display device are also disclosed.