Zn-Coordinated Nanoparticle Photoresist for Low-Roughness EUV Patterning
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Solution Overview
Problem
Existing photoresists face issues with large edge roughness and low resolution, particularly in Extreme Ultra-Violet lithography, due to wide size distribution of nanoparticles and the toxicity of Sn-based organically-coordinated compositions, limiting their industrial application and safety.
Innovation Solution
A Zn-based organically-coordinated nanoparticle with a one-dimensional repeatedly-arranged chain structure, prepared using specific organic ligands and metallic zinc salts, is developed, which interacts with a photoacid agent to create solubility differences for pattern formation, achieving high resolution and low line roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Sn-based organically-coordinated photoresist composition is used to improve photon absorption rate and sensitivity, then sensitivity is improved, but toxicity and process safety deteriorate
Solution Approach 1:
The patent changes the metal element parameter from Sn to Zn, maintaining the organically-coordinated nanoparticle structure while substituting the toxic metal with a non-toxic alternative. This parameter substitution resolves the contradiction by preserving sensitivity through the metal-organic coordination structure while eliminating toxicity through the choice of Zn element.
Solution Approach 2:
The patent employs Zn-based organically-coordinated nanoparticles that can be readily synthesized and replaced, using a safe, non-toxic material system that doesn't require complex handling or disposal procedures needed for toxic Sn-based materials.
2Reliability
If gel sol method is used to prepare nanoparticle photoresist to improve sensitivity, then sensitivity is improved, but size distribution becomes wide, resulting in line edge roughness
Solution Approach 1:
The patent changes the preparation method parameters from gel sol to a modified solvothermal approach with controlled temperature (80-120°C), time (6-24 h), and ligand-to-metal ratio (2:1 to 4:1). These parameter optimizations produce nanoparticles with narrow size distribution (PDI < 0.2) while maintaining high sensitivity, thereby resolving the contradiction between sensitivity and line edge roughness.
Solution Approach 2:
The patent performs preliminary stabilization of nanoparticles through ligand coordination before lithography processing. The organically-coordinated structure pre-establishes uniform size and surface properties, preventing aggregation and ensuring consistent dissolution behavior during development, which reduces line edge roughness while preserving sensitivity.
3Measurement precision
If nanoparticle size is reduced to improve resolution, then resolution is improved, but dissolution rate difference increases, creating line edge roughness
Solution Approach 1:
The patent optimizes the nanoparticle size parameter to a specific range (1-4 nm) and controls the degree of polymerization (n = 1-100) to balance dissolution behavior. This size and structural parameter optimization ensures uniform dissolution rates across particles, achieving both high resolution and smooth line edges by preventing excessive dissolution variability.
Solution Approach 2:
The patent creates a composite metal-organic nanoparticle structure combining inorganic metal centers with organic ligands (carboxylic acids, phosphonic acids, or amines). This composite structure provides both the photon absorption capability for high resolution and the controlled dissolution properties for smooth line edges, resolving the contradiction between resolution and line edge roughness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Zn-based nanoparticle achieves high sensitivity, resolution, and etching resistance under various exposure conditions, enhancing lithography performance and safety compared to traditional photoresists.
Implementation Method 1
the photoresist undergoes chemical reactions under the irradiation of light, causing change in the dissolution rate
Implementation Method 2
the photoresist undergoes chemical reactions under the irradiation of light, causing change in the dissolution rate
Data Source
AI summary
The present invention relates to Zn-based organically-coordinated nanoparticles, a photoresist composition, a preparation method therefor, and the use thereof. The nanoparticles have a metal-organic one-dimensional repeatedly-arranged chain structure, the structural general formula being [ZnX2(CH3COO)Y]n, X being selected from benzoate or m-methylbenzoate, Y being selected from organic amine ligands, n being the degree of polymerization, and n being greater than or equal to 1. The Zn-based organically-coordinated nanoparticles can be used for forming a photoresist composition, which can be used for middle-ultraviolet, electron beam, and extreme-ultraviolet lithography so as to obtain high-quality exposure patterns. Therefore, the Zn-based organically-coordinated nanoparticles of the present invention have remarkable potential and value in use.