Reducing EMI in High Voltage Circuits with Compact Semiconductor Modules
Here’s PatSnap Eureka !
Summary
Problems
High voltage power switching circuits face challenges with excessive voltage overshoots and high levels of electromagnetic interference (EMI) due to hard-switching configurations, which are difficult to mitigate without increasing complexity and cost through soft-switching methods that require specific zero-current or zero-voltage conditions.
Innovation solutions
The design incorporates a capacitor and switching devices on a direct bonded copper (DBC) substrate with a trench-isolated metal layer, allowing for compact layouts that reduce parasitic inductances and enable high-speed switching with low EMI, while maintaining a wide range of output loads.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If hard-switching configuration is used in high voltage power switching circuits, then circuit simplicity is maintained, but excessive voltage overshoots and high levels of electromagnetic interference occur
Why choose this principle:
The patent introduces an intermediary RC snubber circuit between the switching device and the load to absorb voltage overshoots and reduce electromagnetic interference. The resistor-capacitor combination acts as a mediator that dampens voltage spikes without requiring complex soft-switching control circuits, thus maintaining circuit simplicity while reducing EMI.
Principle concept:
If soft-switching methods are used to reduce voltage overshoots and EMI, then electromagnetic interference is reduced, but circuit complexity and cost increase due to requirements for zero-current or zero-voltage conditions
Why choose this principle:
The patent employs simple, inexpensive RC snubber components (resistors and capacitors) that can be easily implemented without complex control mechanisms. These passive components provide effective EMI reduction through their energy absorption characteristics, offering a cost-effective alternative to complex active soft-switching circuits while maintaining circuit simplicity.
Application Domain
Data Source
AI summary:
The design incorporates a capacitor and switching devices on a direct bonded copper (DBC) substrate with a trench-isolated metal layer, allowing for compact layouts that reduce parasitic inductances and enable high-speed switching with low EMI, while maintaining a wide range of output loads.
Abstract
Electronic modules, and methods of forming and operating modules, are described. The modules include a capacitor, a first switching device, and a second switching device. The electronic modules further include a substrate such as a DBC substrate, which includes an insulating layer between a first metal layer and a second metal layer, and may include multiple layers of DBC substrates stacked over one another. The first metal layer includes a first portion and a second portion isolated from one another by a trench formed through the first metal layer between the two portions. The first and second switching devices are over the first metal layer, a first terminal of the capacitor is electrically connected to the first portion of the first metal layer, and a second terminal of the capacitor is electrically connected to the second portion of the first metal layer, with the capacitor extending over the trench.