Optimized MRAM Design for Reduced Power and Enhanced Sensitivity
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Summary
Problems
Current magnetoresistive random access memory (MRAM) devices face issues such as high chip area, high cost, high power consumption, and sensitivity to temperature variations, limiting their effectiveness in magnetic field sensing applications.
Innovation solutions
A semiconductor device fabrication method involving the formation of a magnetic tunneling junction (MTJ) stack on a bottom electrode protruding above an inter-metal dielectric layer, using specific materials and processes like titanium nitride for the bottom electrode and copper for the metal interconnections to minimize short circuits and optimize device performance.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If conventional magnetic field sensor technologies (AMR, GMR, MTJ sensors) are used, then magnetic field sensing capability is achieved, but chip area increases, cost increases, power consumption increases, and temperature stability deteriorates
Why choose this principle:
The patent combines the bottom electrode layer and the magnetic tunneling junction stack into an integrated structure where the bottom electrode protrudes above the first IMD layer. This merging of functions reduces the overall chip area while maintaining temperature stability through the optimized MTJ configuration and material selection including titanium nitride for the bottom electrode.
Principle concept:
If conventional magnetic field sensor technologies are used, then magnetic field sensing is achieved, but manufacturing cost increases
Why choose this principle:
The patent changes material parameters by using titanium nitride for the bottom electrode and optimizing the MTJ stack composition to achieve both high sensing capability and cost-effectiveness. The protruding bottom electrode structure also simplifies the fabrication process by reducing the number of separate manufacturing steps required.
Application Domain
Data Source
AI summary:
A semiconductor device fabrication method involving the formation of a magnetic tunneling junction (MTJ) stack on a bottom electrode protruding above an inter-metal dielectric layer, using specific materials and processes like titanium nitride for the bottom electrode and copper for the metal interconnections to minimize short circuits and optimize device performance.
Abstract
A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.