Enhancing Adhesion in Semiconductor Light-Emitting Elements
Here’s PatSnap Eureka !
Summary
Problems
The adhesion of rhodium (Rh) to the dielectric material in semiconductor light-emitting elements is poor, leading to exfoliation and reduced reflective characteristics due to damage during the removal of the dielectric layer, which affects the reliability of the element.
Innovation solutions
Incorporating a TiN layer, a Ti layer, and a Rh layer stacked successively as a p-side current diffusion layer, with a film density of the Rh layer in the p-side contact electrode and current diffusion layer set to at least 12.0 g/cm3, and annealing the p-side contact electrode at 500° C. to 650° C. to enhance adhesion and reflectivity.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If a Rh layer is used in the p-side contact electrode to achieve high reflectivity for deep ultraviolet light, then the reflectivity is improved, but the adhesion to the dielectric layer deteriorates
Why choose this principle:
An intermediate layer is introduced between the Rh layer and the dielectric layer to serve as a mediator that provides both adhesion to the Rh layer and compatibility with the dielectric material, thereby resolving the adhesion problem while preserving the high reflectivity of the Rh layer
Principle concept:
If a Rh layer is used in the p-side contact electrode to achieve high reflectivity for deep ultraviolet light, then the reflectivity is improved, but the adhesion to the dielectric layer deteriorates
Why choose this principle:
The p-side contact electrode is designed as a composite structure combining Rh layer (for reflectivity) with other materials (for adhesion), creating a multi-layer composite that simultaneously achieves both high reflectivity and strong adhesion to the dielectric layer
Application Domain
Data Source
AI summary:
Incorporating a TiN layer, a Ti layer, and a Rh layer stacked successively as a p-side current diffusion layer, with a film density of the Rh layer in the p-side contact electrode and current diffusion layer set to at least 12.0 g/cm3, and annealing the p-side contact electrode at 500° C. to 650° C. to enhance adhesion and reflectivity.
Abstract
A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a p-side contact electrode that includes a Rh layer in contact with an upper surface of the p-type semiconductor layer; and a p-side current diffusion layer that is in contact with an upper surface and a side surface of the p-side contact electrode and includes a TiN layer, a Ti layer, a Rh layer, and a TiN layer stacked successively. A film density of the Rh layer included in the p-side contact electrode is larger than a film density of the Rh layer included in the p-side current diffusion layer.