A manufacturing method and structure of an IGBT device

The IGBT manufacturing method eliminates the need for a mask in JTE or VLD terminal structures by controlling ion implantation and etching processes, ensuring cost-effectiveness and breakdown voltage maintenance.

CN114937596BActive Publication Date: 2025-07-15GTA SEMICON CO LTD
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Patent Information

Application Number
CN202210475742.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-04-29
Publication Date
2025-07-15
Estimated Expiration
2042-04-29

AI Technical Summary

Technical Problem

In the prior art, the IGBT process of JTE or VLD terminal structure needs to add an additional mask plate when performing carrier storage doping region implantation, resulting in an increase in IGBT production cost.

Method used

By controlling the ion implantation dose of the doped terminal layer of the transition region and the terminal region, the time of the thermal process advancement process before trench etching, and the depth of the trench etching, the doping concentration of the doped terminal layer in the terminal region is adjusted, so that the ion implantation of the carrier storage doped region can be directly carried out without masking.

Benefits of technology

It realizes that the IGBT production cost is reduced without affecting the doping concentration in the IGBT transition zone, and is compatible with the existing IGBT process, avoiding the impact on the withstand voltage value.

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Abstract

The present invention provides a manufacturing method and structure of an IGBT device. The method includes: providing a substrate, the substrate including an active region, a transition region and a terminal region, and including opposite first and second main surfaces; performing a first ion implantation on the first main surfaces of the transition region and the terminal region to form a doped terminal layer spanning the transition region and the terminal region, and performing a second ion implantation on the edge of the terminal region to form a cutoff ring, and then performing a thermal process push treatment; etching the first main surface of the terminal region to form a trench communicating the doped terminal layer and the cutoff ring, and forming a field oxide layer in the trench; performing a second ion implantation on the first main surface to form a carrier storage doped region, and then performing a thermal process push treatment; forming a front structure and a back structure. When manufacturing the carrier storage doped region in the active region in the present invention, implantation can be performed without a mask plate, thereby saving manufacturing costs and at the same time avoiding a great influence of the carrier storage layer on the breakdown voltage of the IGBT.
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