Preparation of C / C-SiC composite material and method by low-temperature reactive infiltration of silicon-nickel alloy
The SiC phase and alloy phase are formed in the C/C composite material by the low-temperature reactive infiltration method of silicon-nickel alloy, which solves the problems of low strength and high-temperature fiber damage in the traditional pure silicon reactive infiltration process, realizes the preparation of high-strength and high-toughness C/C-SiC composite materials, and reduces energy consumption and costs.
Patent Information
- Application Number
- CN202310965914.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-08-02
- Publication Date
- 2025-09-19
- Estimated Expiration
- 2043-08-02
AI Technical Summary
The C/C-SiC composite materials prepared by the traditional pure silicon reactive infiltration process have low strength. The high temperature of the traditional process leads to high energy consumption and high cost, and high temperature damages the fiber strength. The existing improvement methods have the problems of complicated process, high cost and limited performance improvement.
The low-temperature reactive infiltration method of silicon-nickel alloy is adopted. By using a specific proportion of silicon-nickel alloy to react with porous C/C composite materials under low temperature conditions (<1414 ℃), SiC phase and alloy phase (NiSi2 and NiSi) are formed to improve the mechanical properties of the composite material.
It significantly improves the flexural strength and fracture toughness of C/C-SiC composite materials, reduces process temperature requirements, shortens production cycles, improves industrial production efficiency, and maintains the fiber's reinforcing properties.