A super junction IGBT device and a manufacturing method thereof

By introducing an electron injection enhancement structure and a hole extraction path into the superjunction IGBT device, the problems of insufficient short-circuit withstand time and switching oscillation are solved, improving the conduction performance and stability of the device, making it suitable for high-power power electronic systems.

CN117832085BActive Publication Date: 2026-08-28XIAN LONTEN RENEWABLE ENERGY TECH
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Patent Information

Application Number
CN202311860768.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-12-31
Publication Date
2026-08-28
Estimated Expiration
2043-12-31

AI Technical Summary

Technical Problem

Existing superjunction IGBT devices suffer from insufficient short-circuit withstand time, severe switching oscillation, and impaired conductance modulation effect, resulting in inadequate equipment reliability and stability.

Method used

In superjunction IGBT devices, an electron injection enhancement structure and hole extraction path are introduced. An electron injection enhancement region is formed through a deep P+ injection region and a Pbody region, and a hole release path is introduced on the front side to optimize the conduction performance and turn-off speed.

Benefits of technology

It significantly improves the short-circuit withstand time and turn-off speed of superjunction IGBTs, reduces switching oscillation, optimizes the conductivity modulation effect, and enhances the conduction performance and robustness of the device.

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Abstract

The application provides a super-junction IGBT device and a manufacturing method thereof, and a specific technical scheme is as follows: the application connects the positive forward conduction current path, the off hole extraction path and the separation of the super-junction IGBT through a P column region, and connects the front P type region with the second P column region, so that a longitudinal PNP structure is formed, the super-junction IGBT structure can be opened under the strong collector-emitter voltage of the short-circuit device, and the short-circuit current discharge channel of the super-junction IGBT structure can be formed through the bipolar transistor. The application provides the super-junction IGBT with innovation and practicability, the electron injection enhancement structure and the off hole extraction path are optimized, and the compromise of the conduction performance, the switching characteristic and the short-circuit capability of the super-junction IGBT is significantly improved.
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