Metal oxide semiconductor field effect transistor

By designing a metal oxide semiconductor field effect transistor, the parasitic transistor structure is used to reduce the current gain under radiation conditions, and the problem of traditional MOSFETs being prone to burn and reverse recovery losses in space radiation environments is solved, achieving higher anti-single-particle burning performance and lower reverse recovery losses.

CN120152337APending Publication Date: 2025-06-13CHONGQING PINGWEI ENTERPRISE +1
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Patent Information

Application Number
CN202510312874.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-03-17
Publication Date
2025-06-13

AI Technical Summary

Technical Problem

Traditional MOSFETs are prone to single-particle burning effect in space radiation environments, resulting in permanent damage to the device, and at the same time, the reverse recovery loss is large, which is not conducive to the application of high-frequency circuits.

Method used

A metal oxide semiconductor field effect transistor is designed, and its first conductivity type source region, the second conductivity type body region and the first conductivity type drift region constitute a parasitic transistor. By changing the material of the first conductivity type source region, the current gain of the field effect transistor under radiation conditions is reduced, and the large current burning caused by the carrier multiplication effect is suppressed.

Benefits of technology

It improves the device's anti-single-particle burning performance and reduces reverse recovery losses, and is suitable for high-frequency circuit applications.

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Abstract

The invention provides a metal oxide semiconductor field effect transistor, which is characterized in that a first conductive type source region, a second conductive type body region and a first conductive type drift region form a parasitic transistor; the manufacturing material of the first conduction type source region is changed, so that the current gain multiple of the parasitic transistor structure is small, large-current burnout caused by a carrier multiplication effect in a single-particle radiation environment is inhibited, and the single-particle burnout resistance of the device is improved.
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