Method, device and equipment for estimating reaction etching selection ratio of laminated material
Through the machine learning dynamic potential function optimization mechanism of active learning iterative sampling and the adaptive time step algorithm, the accuracy and efficiency problems of the reactive etching selectivity ratio of stacked materials are solved, and the accurate prediction and process optimization of the etching behavior of complex stacked materials are achieved.
Patent Information
- Application Number
- CN202510696957.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-27
- Publication Date
- 2025-10-17
AI Technical Summary
Existing technologies make it difficult to efficiently obtain the reactive etching selectivity of micro-scale stacked materials, especially in the multiphase interfaces and heterogeneous structures of complex stacked materials. Traditional methods find it difficult to accurately capture the material-specific kinetic behavior during the etching process, resulting in insufficient accuracy in estimating the etching selectivity.
An iterative optimization mechanism of machine learning dynamic potential function with active learning iterative sampling is adopted. By obtaining the basic data set of the stacked material, integrating and screening the initial samples, and combining the adaptive time step algorithm for molecular dynamics simulation, the reactive etching selectivity of the stacked material is estimated.
It achieves accurate prediction of the anisotropic etching behavior of complex stacked materials, significantly reduces computing resource consumption, improves the estimation accuracy and computational efficiency of etching selectivity, and supports shortening the atomic-level process simulation cycle at the semiconductor manufacturing end.