High-voltage power device mixed insulating material, preparation method and application

By combining a PI substrate synthesized with BPDA and ODA with c-BN or h-BN nanofillers in high-voltage power devices, the problems of electric field distortion and heat dissipation of traditional insulating materials under high voltage and high power density are solved, thereby improving the insulation and heat dissipation performance of the devices.

CN120966246APending Publication Date: 2025-11-18XI AN JIAOTONG UNIV
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Patent Information

Application Number
CN202511132495.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2025-05-28
Filing Date
2025-08-13
Publication Date
2025-11-18

AI Technical Summary

Technical Problem

Traditional high-voltage power device insulating packaging materials suffer from electric field distortion, partial discharge, and low thermal conductivity in high-voltage, high-power-density scenarios, which limits the performance release of wide-bandgap semiconductor devices.

Method used

PI was synthesized using BPDA and ODA as the insulating material substrate, and c-BN or h-BN nanofillers were added. The PI/BN composite material was formed by ultrasonic dispersion, ice-water bath stirring and vacuum heat treatment, which improved the insulation and thermal properties of the material.

Benefits of technology

A PI/BN composite material with high insulation performance and high temperature resistance has been developed, which improves the breakdown strength and heat dissipation capacity of the device and enhances the insulation performance in high voltage and high power density scenarios.

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Abstract

The invention relates to the field of power semiconductor packaging materials, in particular to a high-voltage power device mixed insulating material, a preparation method and application, and the preparation method comprises the following steps: step 1, dissolving BN nanoparticles under ultrasonic treatment by taking N, N-dimethylacetamide as a solvent to obtain a mixed solvent; step 2, adding 4, 4 '-diaminodiphenyl ether into the mixed solvent in an ice-water bath under a nitrogen atmosphere; step 3, adding 3, 3 ', 4, 4'-biphenyltetracarboxylic dianhydride into the intermediate mixture, and stirring to obtain PAA / BN; and 4, carrying out vacuum heat treatment on the PAA / BN to obtain the PI / BN insulating material. According to the invention, PI synthesized by two materials of BPDA (3, 3 ', 4, 4'-biphenyl tetracarboxylic dianhydride) and ODA (4, 4 '-diaminodiphenyl ether) through a two-step method is used as an insulating material, c-BN / h-BN is added as a nano filler by using the PI as a substrate, so that the novel insulating material is obtained, DBC of the PI / c-BN insulating material with the filler content of 10% successfully passes 7kV and 10kV partial discharge tests, no partial discharge occurs, and the insulating material has good insulation performance. And the voltage withstanding grade of the power module insulating material is improved.
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