Solar cell and preparation method thereof, laminated cell and photovoltaic module

By inserting an ultrathin alumina interface modification layer between the back of the silicon substrate and the tunneling oxide layer, the initial interface problem between the silicon wafer and the tunneling oxide layer is solved, achieving efficient passivation and improved stability, and significantly improving the conversion efficiency and long-term operational reliability of the battery.

CN121888751APending Publication Date: 2026-04-17CHUZHOU JIETAI NEW ENERGY TECH CO LTD
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Patent Information

Application Number
CN202610056698.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-01-15
Publication Date
2026-04-17

AI Technical Summary

Technical Problem

Existing technologies struggle to effectively improve the initial interface between the silicon wafer and the tunneling oxide layer, especially for N-type silicon wafers. In particular, the control of interface state density and charge leads to high carrier recombination rates, which affects cell conversion efficiency.

Method used

An ultrathin alumina interface modification layer is inserted between the back side of the silicon substrate and the tunneling oxide layer. This layer is used to fix negative charges at high density to neutralize positive charges at the interface and fill oxygen vacancy defects, thereby optimizing the interface electric field distribution and controlling carrier tunneling.

Benefits of technology

It significantly reduces interface state density, enhances chemical passivation and field-effect passivation effects, strengthens the stability of the tunneling oxide layer, and improves battery conversion efficiency and long-term reliability.

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Abstract

The invention relates to the field of solar cells, in particular to a solar cell piece and a preparation method thereof, a laminated cell and a photovoltaic module, and the prepared solar cell piece comprises a silicon substrate, and an aluminum oxide interface modification layer, a tunneling oxide layer, a heavily doped polycrystalline silicon layer, a back passivation film layer and a back electrode which are sequentially arranged from the back of the silicon substrate from inside to outside, the front emitting electrode, the front passive film layer and the front electrode are sequentially arranged on the front face of the silicon substrate from inside to outside, and the thickness of the aluminum oxide interface modification layer is smaller than that of the tunneling oxide layer. According to the cell, the aluminum oxide interface modification layer is inserted between the back surface of the silicon wafer and the tunneling oxide layer, fixed negative charges and high dielectric constant of aluminum oxide are utilized, interface positive charges are neutralized, the interface state density is reduced, meanwhile, it is ensured that the electron tunneling efficiency is not affected, and the problem of insufficient passivation caused by Si-SiOX interface defects of an existing cell silicon wafer is solved; and finally, the conversion efficiency and the long-term stability of the battery and the manufactured photovoltaic module are improved.
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