A magnetron filament demotion method and device, computer equipment and storage medium

Abstract

The application provides a magnetron filament demotion method and device, computer equipment and a storage medium, relates to the technical field of medical instrument control, and determines an initial treatment plan based on a single pulse dose by acquiring treatment demand information and calibration parameters of a magnetron, and further predicts the magnetron input average power corresponding to each treatment stage, determines a filament demotion scheme on this basis, and performs cyclic iteration on the initial treatment plan in combination with a demotion stability index, so as to obtain a target demotion scheme and a target treatment plan. Therefore, the filament demotion strategy matched with each treatment stage can be determined in advance before radiotherapy starts, the hysteresis caused by the demotion control based on the current state or the state at the last moment in the prior art is reduced, the filament demotion is better adapted to the dynamically changing treatment plan, the stability of the magnetron operation is improved, and the service life of the magnetron is prolonged.

Description

Technical Field

[0001] This application relates to the field of medical device control technology, and more specifically, to a method, apparatus, computer equipment, and storage medium for retracting a magnetron filament. Background Technology

[0002] The magnetron is a crucial microwave component in radiotherapy equipment, and its filament retraction control directly affects the magnetron's operational stability and lifespan. In existing technologies, filament retraction is typically adjusted based on the detected current power, dose rate, or average power over a period of time. This type of method mostly involves controlling the next moment based on the current or previous state.

[0003] For treatment plans with a relatively constant dose rate, the above method can meet the needs. However, for treatment plans with dynamically changing dose rates, the existing downshifting method is prone to control lag because the working state of the magnetron changes continuously at different treatment stages. This results in the filament's actual state not being able to match the working requirements of the current treatment stage in a timely manner, which in turn affects the operational stability and lifespan of the magnetron. Summary of the Invention

[0004] In view of this, this application provides a method, apparatus, computer equipment, and storage medium for retracting a magnetron filament, in order to solve the problem of lag in the retracting control in the prior art, and to enable the filament retracting to match the various treatment stages in the treatment plan.

[0005] Specifically, this application is implemented through the following technical solution:

[0006] In a first aspect, this application provides a method for retracting the filament of a magnetron, applied to a radiotherapy device, the method comprising:

[0007] Acquire treatment requirement information and calibration parameters of the magnetron in the radiotherapy device; the treatment requirement information includes the total dose required for treatment and the total treatment duration; the calibration parameters include the pulse current amplitude, pulse voltage amplitude, and pulse width of the magnetron in the working state;

[0008] Based on the single-pulse dose corresponding to the magnetron and the treatment requirement information, an initial treatment plan is determined; the initial treatment plan indicates at least one treatment phase, and the phase treatment dose and phase treatment time corresponding to the treatment phase;

[0009] Based on the calibration parameters and the single-pulse dose, the average input power of the magnetron corresponding to each treatment stage in the initial treatment plan is predicted;

[0010] Based on the predicted average input power, a downshifting scheme for the filament in the magnetron corresponding to the initial treatment plan is determined.

[0011] Based on the withdrawal scheme and withdrawal stability index, the initial treatment plan is iterated to obtain a target withdrawal scheme that meets the withdrawal stability requirements and a target treatment plan corresponding to the target withdrawal scheme.

[0012] Radiotherapy is performed based on the target treatment plan, and the filament is de-energized according to the target de-energization scheme during the radiotherapy process.

[0013] In some embodiments, predicting the average input power of the magnetron corresponding to each treatment stage in the initial treatment plan based on the calibration parameters and the single-pulse dose includes:

[0014] For any of the treatment phases, the pulse repetition frequency corresponding to the treatment phase is determined based on the phase treatment dose, the phase treatment time, and the single pulse dose.

[0015] Based on the pulse repetition frequency, the pulse current amplitude, the pulse voltage amplitude, and the pulse width, the average input power corresponding to the treatment stage is predicted.

[0016] In some embodiments, determining the downshift scheme for the filament in the magnetron corresponding to the initial treatment plan based on the predicted average input power includes:

[0017] For any of the treatment stages, the state information of the magnetron under that treatment stage is determined based on the average input power corresponding to that treatment stage;

[0018] Based on the status information, the target current value and / or target voltage value of the filament are determined;

[0019] Based on the target current value and / or target voltage value corresponding to each of the treatment stages, the filament downshifting scheme is determined.

[0020] In some embodiments, determining the downshift scheme for the filament in the magnetron corresponding to the initial treatment plan based on the predicted average input power includes:

[0021] For any of the treatment stages, the target current value and / or target voltage value corresponding to the filament is determined based on the mapping relationship between the input average power and the target current value and / or target voltage value of the filament.

[0022] Based on the target current value and / or target voltage value corresponding to each of the treatment stages, the filament downshifting scheme is determined.

[0023] In some embodiments, the stability metric includes a first threshold and a second threshold;

[0024] The step of iteratively refining the initial treatment plan based on the withdrawal scheme and withdrawal stability index includes:

[0025] Determine the amplitude of the change in filament current and / or voltage between adjacent treatment stages in the withdrawal scheme, and the number of adjustments to filament current and / or voltage within a preset time window;

[0026] If the magnitude of the change is greater than the first threshold and / or the number of adjustments is greater than the second threshold, the initial treatment plan is adjusted, and a withdrawal scheme corresponding to the adjusted initial treatment plan is determined.

[0027] The iteration ends when the change magnitude of the adjusted rollback scheme is less than or equal to the first threshold and the number of adjustments is less than or equal to the second threshold.

[0028] In some embodiments, the calibration parameters of the magnetron in the radiotherapy device are determined by the following steps:

[0029] For any calibration parameter, the first parameter value of the radiotherapy device at a first position in the working state is collected; the first position includes the secondary side of the transformer of the radiotherapy device;

[0030] Based on the pre-calibrated parameter mapping curve and the first parameter value, the second parameter value of the radiotherapy device at the second position in the working state is determined; the second position includes the input side of the magnetron of the radiotherapy device.

[0031] Based on the second parameter value, the calibration parameters of the magnetron are determined.

[0032] In some embodiments, the step of retarding the filament according to the target retarding scheme during the radiotherapy includes:

[0033] When switching between adjacent treatment stages, the filament is controlled according to the target current value and / or target voltage value corresponding to the next treatment stage.

[0034] Secondly, this application provides a magnetron filament retraction device for use in radiotherapy equipment, the device comprising:

[0035] The acquisition module is used to acquire treatment requirement information and calibration parameters of the magnetron in the radiotherapy device; the treatment requirement information includes the total dose required for treatment and the total treatment duration; the calibration parameters include the pulse current amplitude, pulse voltage amplitude and pulse width of the magnetron in the working state.

[0036] The first determining module is used to determine an initial treatment plan based on the single-pulse dose corresponding to the magnetron and the treatment requirement information; the initial treatment plan indicates at least one treatment phase, and the phase treatment dose and phase treatment time corresponding to the treatment phase;

[0037] The prediction module is used to predict the average input power of the magnetron corresponding to each treatment stage in the initial treatment plan based on the calibration parameters and the single-pulse dose.

[0038] The second determining module is used to determine, based on the predicted average input power, the downshifting scheme for the filament in the magnetron corresponding to the initial treatment plan;

[0039] An iterative module is used to iterate the initial treatment plan based on the withdrawal scheme and the withdrawal stability index to obtain a target withdrawal scheme that meets the withdrawal stability requirements and a target treatment plan corresponding to the target withdrawal scheme.

[0040] The control module is used to perform radiotherapy based on the target treatment plan and to retract the filament according to the target retraction scheme during the radiotherapy process.

[0041] In some embodiments, the prediction module is used to:

[0042] For any of the treatment phases, the pulse repetition frequency corresponding to the treatment phase is determined based on the phase treatment dose, the phase treatment time, and the single pulse dose.

[0043] Based on the pulse repetition frequency, the pulse current amplitude, the pulse voltage amplitude, and the pulse width, the average input power corresponding to the treatment stage is predicted.

[0044] In some embodiments, the second determining module is used to:

[0045] For any of the treatment stages, the state information of the magnetron under that treatment stage is determined based on the average input power corresponding to that treatment stage;

[0046] Based on the status information, the target current value and / or target voltage value of the filament are determined;

[0047] Based on the target current value and / or target voltage value corresponding to each of the treatment stages, the filament downshifting scheme is determined.

[0048] In some embodiments, the second determining module is used to:

[0049] For any of the treatment stages, the target current value and / or target voltage value corresponding to the filament is determined based on the mapping relationship between the input average power and the target current value and / or target voltage value of the filament.

[0050] Based on the target current value and / or target voltage value corresponding to each of the treatment stages, the filament downshifting scheme is determined.

[0051] In some embodiments, the stability metric includes a first threshold and a second threshold;

[0052] The iterative module is used for:

[0053] Determine the amplitude of the change in filament current and / or voltage between adjacent treatment stages in the withdrawal scheme, and the number of adjustments to filament current and / or voltage within a preset time window;

[0054] If the magnitude of the change is greater than the first threshold and / or the number of adjustments is greater than the second threshold, the initial treatment plan is adjusted, and a withdrawal scheme corresponding to the adjusted initial treatment plan is determined.

[0055] The iteration ends when the change magnitude of the adjusted rollback scheme is less than or equal to the first threshold and the number of adjustments is less than or equal to the second threshold.

[0056] In some embodiments, the apparatus further includes a third determining module, configured to:

[0057] For any calibration parameter, the first parameter value of the radiotherapy device at a first position in the working state is collected; the first position includes the secondary side of the transformer of the radiotherapy device;

[0058] Based on the pre-calibrated parameter mapping curve and the first parameter value, the second parameter value of the radiotherapy device at the second position in the working state is determined; the second position includes the input side of the magnetron of the radiotherapy device.

[0059] Based on the second parameter value, the calibration parameters of the magnetron are determined.

[0060] In some embodiments, the control module is used to:

[0061] When switching between adjacent treatment stages, the filament is controlled according to the target current value and / or target voltage value corresponding to the next treatment stage.

[0062] Thirdly, embodiments of this application also provide a computer device, which includes a processor and a memory. The memory stores machine-readable instructions executable by the processor. The processor is used to execute the machine-readable instructions stored in the memory. When the machine-readable instructions are executed by the processor, they perform the steps of the first aspect above, or any possible implementation of the first aspect.

[0063] Fourthly, optional embodiments of this application also provide a computer-readable storage medium storing a computer program that, when run, performs the steps of the first aspect or any possible implementation of the first aspect.

[0064] The magnetron filament withdrawal method, apparatus, computer equipment, and storage medium provided in this application obtain treatment demand information and magnetron calibration parameters, determine an initial treatment plan based on single-pulse dose, and further predict the average magnetron input power corresponding to each treatment stage. Based on this, a filament withdrawal scheme is determined, and the initial treatment plan is iteratively applied in conjunction with withdrawal stability indicators to obtain a target withdrawal scheme and a target treatment plan. Therefore, it is possible to predetermine the filament withdrawal strategy matching each treatment stage before the start of radiotherapy, reducing the lag caused by withdrawal control based on the current state or the state at the previous moment in the prior art, allowing filament withdrawal to better adapt to dynamically changing treatment plans, which is beneficial to improving the stability of magnetron operation and extending the service life of the magnetron.

[0065] Furthermore, this application predicts the average input power of the magnetron for each treatment stage in the initial treatment plan based on the magnetron's calibration parameters and single-pulse dose. This makes the formulation of the filament downshifting scheme closer to the actual power requirements of the magnetron at each treatment stage, which helps to improve the accuracy of downshifting control and avoids the magnetron's operating state deviating from the reasonable operating point due to inaccurate downshifting criteria.

[0066] Furthermore, this application does not directly execute filament shedding according to the initial treatment plan, but further combines shedding stability indicators to iteratively refine the initial treatment plan, thereby obtaining a target shedding scheme and target treatment plan that meet the shedding stability requirements. This allows for consideration of the frequency and magnitude of filament shedding switching between different treatment stages, avoiding excessively frequent or large changes in the filament state within a short period of time. This helps improve the stability of the filament shedding process and reduces the risk of affecting the stable operation of the magnetron due to unreasonable shedding switching. Attached Figure Description

[0067] Figure 1This is a flowchart illustrating an exemplary embodiment of a magnetron filament retraction method according to this application;

[0068] Figure 2 This is a schematic diagram illustrating the mapping relationship between the input average power and the target current value and the target voltage value, respectively, according to an exemplary embodiment of this application;

[0069] Figure 3 This is a flowchart illustrating another magnetron filament retraction method according to an exemplary embodiment of this application;

[0070] Figure 4 This is a schematic diagram of a magnetron filament retraction device shown in an exemplary embodiment of this application;

[0071] Figure 5 This is a schematic diagram of a computer device illustrated in an exemplary embodiment of this application. Detailed Implementation

[0072] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application.

[0073] The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The singular forms “a,” “the,” and “the” used in this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0074] It should be understood that although the terms first, second, third, etc., may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, without departing from the scope of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the word "if" as used herein may be interpreted as "when," "when," or "in response to determination."

[0075] Studies have shown that the above methods can meet the needs of treatment plans with a relatively constant dose rate. However, for treatment plans with dynamically changing dose rates, the existing downshifting methods are prone to control lag due to the continuous changes in the working state of the magnetron at different treatment stages. This results in the filament's actual state not being able to match the working requirements of the current treatment stage in a timely manner, thus affecting the operational stability and lifespan of the magnetron.

[0076] In view of this, this application provides a method, apparatus, computer equipment, and storage medium for retracting a magnetron filament, in order to solve the problem of lag in the retracting control in the prior art, and to enable the filament retracting to match the various treatment stages in the treatment plan.

[0077] The deficiencies of the existing technical solutions are the result of the inventor's practice and careful research. Therefore, the discovery process of the above problems and the solutions proposed in this application below should be considered as the inventor's contributions to this application.

[0078] To facilitate understanding of this embodiment, the application scenario of the magnetron filament retraction method disclosed in this application embodiment will first be introduced. The executing entity of the magnetron filament retraction method provided in this application embodiment can be a computer device, such as a radiotherapy device or the control module of a radiotherapy device. In some possible implementations, the magnetron filament retraction method can be implemented by a processor calling computer-readable instructions stored in memory.

[0079] See Figure 1 The diagram shown is a flowchart illustrating a magnetron filament retraction method according to an exemplary embodiment of this application. The method includes steps S101 to S106, wherein:

[0080] S101. Obtain treatment requirement information and calibration parameters of the magnetron in the radiotherapy device; the treatment requirement information includes the total dose required for treatment and the total treatment duration; the calibration parameters include the pulse current amplitude, pulse voltage amplitude and pulse width of the magnetron in the working state.

[0081] This step involves acquiring treatment requirement information and the calibration parameters of the magnetron in the radiotherapy equipment. The treatment requirement information refers to information characterizing the needs of this radiotherapy task, and may include at least the total dose required and the total treatment duration. The total dose required characterizes the planned total dose output during this treatment, and the total treatment duration characterizes the planned execution time corresponding to completing the total dose output.

[0082] In some implementations, the treatment requirement information can be obtained by the control module parsing the treatment plan sent by the treatment planning system; in other implementations, the treatment requirement information can also be obtained by the control module reading from local memory, a host computer, or a hospital information system, or generated by the operator through a human-machine interface. The treatment requirement information may further include one or more of the following: dose allocation information for each time period, time allocation information, dose rate information, gantry angle information, treatment head angle information, and treatment bed position information. Obtaining the treatment requirement information provides a data foundation for subsequently determining the initial treatment plan based on single-pulse doses.

[0083] Simultaneously, the calibration parameters of the magnetron in the radiotherapy device can be obtained. These calibration parameters, obtained after testing and / or calibration, characterize the operating characteristics of the magnetron in its working state and may include at least the pulse current amplitude, pulse voltage amplitude, and pulse width. The pulse current amplitude may be the peak current or equivalent value corresponding to a single operating pulse of the magnetron; the pulse voltage amplitude may be the peak voltage or equivalent value corresponding to a single operating pulse of the magnetron; and the pulse width may be the duration of a single operating pulse on the time axis, and in some embodiments, it may be represented by a full width at half maximum (FWHM).

[0084] In some embodiments, for any calibration parameter, the first parameter value of the radiotherapy device at a first position in the working state can be collected first, the first position may include the secondary side of the transformer; then, based on the pre-calibrated parameter mapping curve and the first parameter value, the second parameter value at a second position can be determined, the second position may include the magnetron input side; and then the calibration parameter of the magnetron can be determined based on the second parameter value.

[0085] For example, pulse current signals can be acquired by a current transformer, Hall current sensor, or Rogowski coil disposed on the secondary side of the transformer, and the amplitude of the pulse current can be determined by the sampling circuit module; pulse voltage signals can be acquired by a capacitive voltage divider, resistive voltage divider, or high-voltage detection structure disposed on the secondary side of the transformer, and the amplitude of the pulse voltage can be determined by the sampling circuit module; the pulse width can be determined based on the pulse current signal and / or the pulse voltage signal, preferably the half-width at half maximum (WHM) of the pulse signal.

[0086] The aforementioned parameter mapping curve can be understood as a curve that converts the parameter values ​​measured at the detection location into the corresponding actual parameter values ​​on the magnetron input side. Since the magnetron input side is located in a high-voltage, high-interference environment, it is usually difficult to directly measure the pulse current amplitude, pulse voltage amplitude, and pulse width on the magnetron input side in a long-term, stable, and accurate manner. Therefore, this application can first sample at a convenient detection location, such as collecting the first parameter value on the secondary side of the transformer, and then convert the first parameter value into the corresponding second parameter value on the magnetron input side using a pre-established parameter mapping curve.

[0087] The parameter mapping curve can be obtained through pre-calibration. Specifically, during equipment debugging, factory calibration, or maintenance calibration, the equipment's own sampling structure can be set at the first position, and a standard measuring device can be set at the second position or a standard measurement position corresponding to the second position. Parameter values ​​are acquired at two locations under the same set of operating conditions. These operating conditions can include different power states, different pulse repetition frequencies, different dose rate levels, or different operating load states. Subsequently, the first parameter values ​​and second parameter values ​​acquired under multiple operating conditions are correlated to form multiple sets of sample data. These sample data are then fitted, generated using a lookup table, or subjected to piecewise linear processing to obtain the parameter mapping curve. In subsequent actual treatment, only the first parameter value at the first position needs to be collected; the second parameter value on the magnetron input side can then be calculated based on this parameter mapping curve, and the calibration parameters can be determined accordingly.

[0088] Furthermore, the method for establishing parameter mapping curves can differ depending on the type of parameter. For example, for pulse current amplitude, a current mapping curve can be established between the current amplitude measured on the secondary side of the transformer and the actual current amplitude on the magnetron input side; for pulse voltage amplitude, a voltage mapping curve can be established between the secondary side voltage divider sampled value and the actual voltage amplitude on the magnetron input side; for pulse width, a width mapping curve can be established between the pulse width corresponding to the secondary side sampled signal and the actual pulse width on the magnetron input side. In some implementations, the parameter mapping curves can be a one-to-one linear relationship; in other implementations, the parameter mapping curves can also be nonlinear relationships, piecewise function relationships, lookup table relationships, or interpolation relationships.

[0089] S102. Based on the single-pulse dose corresponding to the magnetron and the treatment requirement information, determine an initial treatment plan; the initial treatment plan indicates at least one treatment phase, and the phase treatment dose and phase treatment time corresponding to the treatment phase.

[0090] In this step, the single-pulse dose is used to characterize the dose output value corresponding to a single working pulse of the magnetron, and the treatment requirement information includes at least the total dose required for treatment and the total treatment duration. Based on the total dose required for treatment, the total treatment duration, and the single-pulse dose, a preliminary plan for this radiotherapy procedure can be made to obtain the initial treatment plan.

[0091] The treatment phase can be a treatment interval divided according to dose granularity and time granularity; the treatment dose of the phase can represent the planned output dose within the corresponding treatment phase; and the treatment time of the phase can represent the planned duration for completing the treatment dose of the phase.

[0092] Optionally, when the entire treatment process does not require further subdivision, the initial treatment plan may include only one treatment phase; when improved accuracy in subsequent power prediction and downshift control is required, the initial treatment plan may include multiple treatment phases. Determining the initial treatment plan provides a basis for subsequently predicting the average magnetron input power by treatment phase and determining the filament downshift scheme.

[0093] Here, the treatment phase refers to a planned execution interval obtained by dividing the entire radiotherapy process; the phase treatment dose refers to the planned output dose within the corresponding treatment phase; and the phase treatment time refers to the planned time required to complete the corresponding phase treatment dose. By dividing the entire treatment process into phases, it is possible to predict the average input power corresponding to each treatment phase and further determine the filament reduction scheme adapted to each treatment phase.

[0094] For example, suppose a treatment plan is formulated based on a maximum dose rate of 1600 MU / min. Since 1600 MU / min corresponds to a theoretical output dose of 800 MU within 30 seconds, it can be determined that the treatment plan does not consistently adhere to the maximum dose rate throughout the 30-second treatment period. Instead, different dose output requirements exist at different time points, with some treatment phases corresponding to higher phase dose rates and others to lower phase dose rates. In this case, if the entire treatment process is treated as a whole, the initial treatment plan can be defined as comprising only one treatment phase, where the phase treatment dose is 500 MU and the phase treatment time is 30 seconds. Based on this single treatment phase, subsequent average input power prediction and filament reduction scheme determination can be performed.

[0095] To ensure the initial treatment plan better reflects actual dose variations across different time periods during treatment, the entire treatment process can be divided into multiple treatment phases. For example, the initial treatment plan can be divided into two phases: the first phase has a dose of 266 MU and a treatment time of 10 seconds; the second phase has a dose of 234 MU and a treatment time of 20 seconds. Alternatively, the initial treatment plan can be divided into two phases: the first phase has a dose of 400 MU and a treatment time of 15 seconds; the second phase has a dose of 100 MU and a treatment time of 15 seconds. Furthermore, the initial treatment plan can be divided into three phases: the first phase has a dose of 266 MU and a treatment time of 10 seconds; the second phase has a dose of 100 MU and a treatment time of 10 seconds; and the third phase has a dose of 134 MU and a treatment time of 10 seconds. It is evident that, for the same total dose and total treatment duration, different initial treatment plans can be obtained based on different phase segmentation strategies.

[0096] In this application, the purpose of dividing the initial treatment plan into stages is to ensure that each treatment stage corresponds to a specific stage treatment dose and stage treatment time, thereby facilitating iterative optimization of the initial treatment plan in subsequent steps and determining a suitable filament reduction scheme.

[0097] However, if the treatment process is divided into too few stages, each stage typically corresponds to only one setback parameter. During this stage, when the magnetron is affected by factors such as backflushing, a single setback parameter may not be able to adapt to changes in the actual operating conditions, thus affecting the normal operation of the equipment. If the treatment process is divided into too many stages, different stages often correspond to different setback parameters, leading to excessively rapid changes in filament parameters and affecting the stability of the magnetron's operation. Especially for magnetrons using barium-tungsten cathodes, rapid filament changes may even cause related insulating materials to detach. Therefore, it is difficult to apply a fixed stage division method to different treatment plans; intelligent selection based on the specific treatment plan is necessary.

[0098] S103. Based on the calibration parameters and the single-pulse dose, predict the average input power of the magnetron corresponding to each treatment stage in the initial treatment plan.

[0099] The average input power refers to the average input power of the magnetron during the corresponding treatment phase, characterizing the actual power load of the magnetron during that phase. This average input power serves as a crucial basis for subsequently determining the filament reduction scheme. Since each treatment phase in the initial treatment plan corresponds to a different treatment dose and duration, the average input power of the magnetron can also differ between treatment phases. By predicting each treatment phase separately, the subsequently determined reduction scheme can better adapt to the actual operational requirements of different treatment phases.

[0100] In some implementations, for any treatment stage, the pulse repetition frequency corresponding to that treatment stage can be determined first, based on the stage treatment dose, stage treatment time, and the single pulse dose; then, based on the pulse repetition frequency, the pulse current amplitude, the pulse voltage amplitude, and the pulse width, the input average power corresponding to that treatment stage can be predicted.

[0101] In other words, this application does not base its rollback on the actual power result detected at the previous moment, but rather combines the pre-determined stage treatment dose and stage treatment time in the treatment plan to predict the average input power corresponding to each treatment stage, thereby providing a basis for the subsequent pre-formulation of rollback plans.

[0102] For example, the pulse repetition frequency and the average input power can be determined using the following formula:

[0103] ;

[0104] ;

[0105] in, Indicates the pulse repetition frequency. Indicates the treatment dose for a particular stage. Indicates the duration of a treatment phase. Indicates a single pulse dose. Indicates the average input power. Indicates the pulse voltage amplitude. Indicates the amplitude of the pulse current. Indicates the pulse width.

[0106] S104. Based on the predicted average input power, determine the downshift scheme for the filament in the magnetron corresponding to the initial treatment plan.

[0107] The aforementioned filament retraction scheme refers to the control arrangement adopted by the filament in different treatment stages, indicating the target current and / or target voltage values ​​that the filament should use in each treatment stage. In some embodiments, it may also include the corresponding switching relationship between adjacent treatment stages. The filament retraction scheme can serve as the basis for execution of filament retraction control during subsequent radiotherapy, so that the magnetron can maintain an operating state adapted to the power requirements of each treatment stage.

[0108] Since the treatment dose and treatment time can vary for different treatment stages, the average input power for each treatment stage can also differ. Therefore, this application does not use a single, fixed withdrawal parameter for the entire treatment process, but rather determines appropriate filament control parameters for each treatment stage, thereby forming a withdrawal scheme corresponding to the initial treatment plan.

[0109] In some implementations, the state information of the magnetron in any of the treatment stages can be determined based on the average input power corresponding to that treatment stage.

[0110] The state information refers to information characterizing the operating state of the magnetron in the corresponding treatment stage, and may include one or more of the following: power load state, operating point state, emission state, thermal state, or state classification information characterizing filament control requirements. For example, a correspondence between the average input power and the state information can be established in advance; for instance, different average input power ranges can be mapped to different operating states. After obtaining the average input power corresponding to a certain treatment stage, the state information of the magnetron in that treatment stage can be determined.

[0111] Furthermore, based on the aforementioned state information, the target current value and / or target voltage value of the filament can be determined. The target current value refers to the target current parameter that the filament should be set at the corresponding treatment stage, and the target voltage value refers to the target voltage parameter that the filament should be set at the corresponding treatment stage. The target current value and target voltage value can be used individually or in combination, depending on the control method of the filament power supply. For example, when the filament power supply uses a constant current control method, the target current value of the filament can be determined; when the filament power supply uses a constant voltage control method, the target voltage value of the filament can be determined; when the filament power supply supports coordinated current and voltage regulation, the target current value and target voltage value can also be determined simultaneously. The target current value and / or target voltage value can be determined by the downshift curve provided by the magnetron manufacturer, or by experimental calibration, historical operating data fitting, database retrieval, or a preset control model.

[0112] After obtaining the target current and / or target voltage values ​​corresponding to each treatment stage, a filament downshifting scheme can be determined based on the target current and / or target voltage values ​​corresponding to each treatment stage. If the initial treatment plan includes only one treatment stage, the downshifting scheme may include one target current and / or target voltage value; if the initial treatment plan includes multiple treatment stages, the downshifting scheme may include multiple target current and / or target voltage values ​​arranged in the order of the treatment stages, thereby forming a phased downshifting scheme for the entire treatment process.

[0113] In other implementations, intermediate conversion based on state information can be avoided. Instead, the target current and / or target voltage values ​​of the filament can be determined directly based on the mapping relationship between the input average power and the target current and / or target voltage values ​​of the filament. Specifically, a correspondence between the input average power and the target current value of the filament, and / or the target voltage value of the filament, can be established in advance. This correspondence can be implemented using mapping curves, lookup tables, piecewise functions, fitting models, or interpolation models. For any treatment stage, after obtaining the input average power corresponding to that treatment stage, the target current and / or target voltage values ​​of the filament can be directly determined based on the mapping relationship. Further, based on the target current and / or target voltage values ​​corresponding to each treatment stage, a filament downgrade scheme is determined. Using this method reduces intermediate steps in state recognition, thereby simplifying the generation process of the downgrade scheme.

[0114] For example, for an initial treatment plan that includes a first treatment stage, a second treatment stage, and a third treatment stage, the first target current and / or first target voltage, the second target current and / or second target voltage, and the third target current and / or third target voltage values ​​for the filament can be determined based on the average input power corresponding to each stage. A downsizing scheme containing multiple stage control parameters can then be formed accordingly. Subsequently, during radiotherapy, when a treatment stage changes, the filament current and / or filament voltage can be adjusted according to the downsizing scheme.

[0115] See Figure 2 The figure shown is a schematic diagram illustrating the mapping relationship between the input average power and the target current and target voltage values, respectively, according to an exemplary embodiment of this application. The figure shows the correspondence between the input average power and the target current and target voltage values ​​of the filament. The horizontal axis represents the input average power of the magnetron in kW, and the vertical axis represents the current or voltage of the filament in A or V.

[0116] S105. Based on the withdrawal scheme and withdrawal stability index, the initial treatment plan is iterated to obtain a target withdrawal scheme that meets the withdrawal stability requirements and a target treatment plan corresponding to the target withdrawal scheme.

[0117] The "flushing stability index" refers to an evaluation index used to characterize whether the filament flare-out process meets the requirements for stable operation. The "target flare-out scheme" refers to a filament flare-out control scheme that meets the flare-out stability requirements after iterative optimization. The "target treatment plan" refers to a treatment plan corresponding to the target flare-out scheme. Through this step, while taking into account the differences in power requirements at each treatment stage, the switching frequency and amplitude of the filament control parameters can be constrained, thereby avoiding adverse effects on the stable operation of the magnetron caused by excessively rapid or large changes in the flare-out parameters.

[0118] The aforementioned withdrawal stability index can be used to evaluate the changes in control parameters between adjacent treatment phases in the withdrawal protocol.

[0119] In some implementations, the downgrade stability index may include a first threshold and a second threshold. The first threshold can be used to limit the amplitude of change in filament control parameters between adjacent treatment stages, and the second threshold can be used to limit the number of adjustments to the filament control parameters within a preset time window. Here, the amplitude of change may be the difference between the target filament current value and / or the target filament voltage value between adjacent treatment stages, and the number of adjustments may characterize the number of times the target filament current value and / or target voltage value changes within the preset time window. By introducing the above-mentioned downgrade stability index, the stability of the downgrade scheme can be quantitatively evaluated.

[0120] Specifically, in some implementations, the amplitude of the change in filament current and / or the amplitude of the change in filament voltage between adjacent treatment stages in the withdrawal scheme can be determined first, as well as the number of adjustments to the filament current and / or filament voltage within a preset time window. The preset time window can be a fixed time interval, such as 5s, 10s, 15s, 20s, or other pre-set time ranges. The control module can iterate through the target current and / or target voltage values ​​corresponding to each treatment stage in the withdrawal scheme, statistically analyze the parameter changes during the switching of adjacent treatment stages, and count the number of parameter adjustments within the preset time window.

[0121] If the magnitude of the change is greater than the first threshold, and / or the number of adjustments is greater than the second threshold, it indicates that the withdrawal scheme corresponding to the current initial treatment plan cannot meet the withdrawal stability requirements. In this case, the initial treatment plan can be adjusted, and the corresponding withdrawal scheme can be re-determined based on the adjusted initial treatment plan to enter the next iteration.

[0122] Here, adjusting the initial treatment plan can involve adjusting the way treatment stages are divided. For example, this can be achieved by merging some adjacent treatment stages, increasing the treatment dose for a single treatment stage, increasing the treatment time for a single treatment stage, or reallocating the treatment dose and treatment time for each treatment stage. This can reduce the magnitude of changes in fallback parameters between adjacent treatment stages and / or reduce the number of adjustments to fallback parameters per unit time. In other words, this application does not execute the fallback plan directly after it is determined, but allows the control module to repeatedly revise the initial treatment plan according to fallback stability requirements to make the resulting fallback plan more stable.

[0123] In some implementations, if the magnitude of change in the adjusted rollback scheme is less than or equal to the first threshold, and the number of adjustments is less than or equal to the second threshold, then the iteration can be terminated, and the current rollback scheme can be determined as the target rollback scheme, and the corresponding treatment plan can be determined as the target treatment plan. In other words, the target rollback scheme is not the result of an initial generation, but rather an optimized result obtained through iterative iterations constrained by the rollback stability index.

[0124] In this way, the final downsizing scheme can not only reflect the power requirements of different treatment stages, but also meet the stability requirements of the filament control process.

[0125] For example, for the same total dose and duration of treatment, there can be multiple different ways to divide the initial treatment plan. If the treatment process is divided too few times, there is usually only one fallback parameter within a treatment phase. When the magnetron is affected by factors such as backfire during that treatment phase, the single fallback parameter may not be able to adapt to changes in the actual working state. If the treatment process is divided too many times, different fallback parameters will correspond to different treatment phases, which may lead to excessively frequent changes in filament parameters. Therefore, this application introduces a fallback stability index to iteratively derive the initial treatment plan, enabling the control module to filter between different phase division methods, thereby determining a target treatment plan that balances fallback matching and fallback stability.

[0126] Furthermore, in some embodiments, the iterative process may include the following steps: First, a corresponding withdrawal scheme is obtained based on the initial treatment plan; then, the magnitude of the change in the target filament current value and / or target voltage value between adjacent treatment stages in the withdrawal scheme is calculated, and the number of parameter adjustments within a preset time window is counted; when the magnitude of the change exceeds a first threshold and / or the number of adjustments exceeds a second threshold, the initial treatment plan is adjusted, and the input average power prediction and withdrawal scheme determination process is re-executed; the above process is repeated until a withdrawal scheme that meets the withdrawal stability requirements is obtained. Thus, the target withdrawal scheme and the corresponding target treatment plan can be predetermined by the control module before treatment execution.

[0127] S106. Perform radiotherapy based on the target treatment plan, and during the radiotherapy process, remove the filament according to the target removal scheme.

[0128] In this step, by controlling the filament according to the target rollback scheme during radiotherapy, the filament state can be made to correspond to each treatment stage in the target treatment plan, thereby improving the stability of the magnetron operation.

[0129] Specifically, in some implementations, the control module can preload the target treatment plan and the target downsizing scheme into the radiotherapy equipment before radiotherapy begins. After radiotherapy begins, the control module controls the magnetron to complete the dose output corresponding to each treatment stage according to the target treatment plan, and simultaneously controls the filament power supply to output corresponding filament control parameters according to the target downsizing scheme to achieve filament downsizing. Here, the filament control parameters can be the target filament current value and / or target voltage value, which can be determined according to the control method of the filament power supply.

[0130] In some embodiments, the step of resetting the filament according to the target resetting scheme may include: adjusting the filament current and / or filament voltage based on the target current and / or target voltage value corresponding to the next treatment stage when switching between adjacent treatment stages. That is, when radiotherapy switches from one treatment stage to another, the control module can drive the filament power supply to adjust the filament output according to the filament control parameters corresponding to the next treatment stage predetermined in the target resetting scheme, so that the filament state switches to a resetting state adapted to the next treatment stage. In this way, the filament resetting control can be coordinated with the stage switching process in the target treatment plan.

[0131] In other implementations, the control module can also identify the current treatment stage during the execution of the target phase transition plan, and trigger an update of the filament control parameters when a treatment stage switch is detected. For example, the control module can determine whether a new treatment stage has been entered based on the stage treatment time, cumulative output dose, control node, or stage boundary information corresponding to each treatment stage in the target treatment plan; when entering a new treatment stage, it reads the target current value and / or target voltage value corresponding to that treatment stage from the target phase transition plan and controls the filament power supply to make corresponding adjustments.

[0132] It should be noted that in this application, the filament backoff control during radiotherapy is not determined in real-time based on the power result detected temporarily at the current moment, but rather based on the target backoff plan obtained before treatment execution. In other words, the control module pre-determines the filament control parameters for different treatment stages according to the power requirements of each treatment stage in the target treatment plan before treatment. Therefore, during treatment execution, filament backoff control can be achieved simply by calling the corresponding backoff parameters according to the stage progression of the target treatment plan. This helps reduce the control lag caused by backoff adjustment based on the current state or the state at the previous moment in the prior art.

[0133] For example, for a targeted treatment plan comprising multiple treatment phases, the control module can control the filament to use a first target current value and / or a first target voltage value during the execution of the first treatment phase, a second target current value and / or a second target voltage value during the execution of the second treatment phase, and a third target current value and / or a third target voltage value during the execution of the third treatment phase. Thus, the filament downshift control can switch accordingly as the targeted treatment plan progresses, allowing the magnetron to better adapt to the operational needs of different treatment phases throughout the radiotherapy process.

[0134] See Figure 3 The diagram shows a flowchart of another magnetron filament de-switching method according to an exemplary embodiment of this application. The method first acquires treatment demand information and magnetron calibration parameters, and determines an initial treatment plan based on the single-pulse dose and treatment demand information. Then, it first determines whether the number of filament current and / or voltage adjustments meets the de-switching stability index. If not, it returns to adjusting the initial treatment plan; if so, it predicts the average input power corresponding to each treatment stage based on the calibration parameters and single-pulse dose, and determines the filament de-switching scheme corresponding to the initial treatment plan based on the average input power. Further, it determines whether the amplitude of filament current and / or voltage changes meets the de-switching stability index. If not, it returns to adjusting the initial treatment plan; if so, it completes the iteration and controls the system according to the iterated de-switching scheme.

[0135] It is worth noting that this flowchart is mainly used to illustrate the logical relationships between the various processing steps, rather than to limit the specific content or execution order of each step.

[0136] The magnetron filament withdrawal method provided in this application obtains treatment demand information and magnetron calibration parameters, determines an initial treatment plan based on single-pulse dose, and further predicts the average magnetron input power corresponding to each treatment stage. Based on this, a filament withdrawal scheme is determined, and the initial treatment plan is iteratively applied in conjunction with withdrawal stability indicators to obtain a target withdrawal scheme and a target treatment plan. Therefore, it is possible to predetermine the filament withdrawal strategy matching each treatment stage before the start of radiotherapy, reducing the lag caused by withdrawal control based on the current state or the state at the previous moment in the prior art, allowing filament withdrawal to better adapt to dynamically changing treatment plans, which is beneficial to improving the stability of magnetron operation and extending the service life of the magnetron.

[0137] Furthermore, this application predicts the average input power of the magnetron for each treatment stage in the initial treatment plan based on the magnetron's calibration parameters and single-pulse dose. This makes the formulation of the filament downshifting scheme closer to the actual power requirements of the magnetron at each treatment stage, which helps to improve the accuracy of downshifting control and avoids the magnetron's operating state deviating from the reasonable operating point due to inaccurate downshifting criteria.

[0138] Furthermore, this application does not directly execute filament shedding according to the initial treatment plan, but further combines shedding stability indicators to iteratively refine the initial treatment plan, thereby obtaining a target shedding scheme and target treatment plan that meet the shedding stability requirements. This allows for consideration of the frequency and magnitude of filament shedding switching between different treatment stages, avoiding excessively frequent or large changes in the filament state within a short period of time. This helps improve the stability of the filament shedding process and reduces the risk of affecting the stable operation of the magnetron due to unreasonable shedding switching.

[0139] Corresponding to the aforementioned embodiments of the magnetron filament retraction method, this application also provides embodiments of a magnetron filament retraction device.

[0140] See Figure 4 The diagram shown is a schematic representation of a magnetron filament retraction device according to an exemplary embodiment of this application. The device includes:

[0141] The acquisition module 410 is used to acquire treatment requirement information and calibration parameters of the magnetron in the radiotherapy device; the treatment requirement information includes the total dose required for treatment and the total treatment duration; the calibration parameters include the pulse current amplitude, pulse voltage amplitude and pulse width of the magnetron in the working state.

[0142] The first determining module 420 is used to determine an initial treatment plan based on the single-pulse dose corresponding to the magnetron and the treatment requirement information; the initial treatment plan indicates at least one treatment stage, and the stage treatment dose and stage treatment time corresponding to the treatment stage;

[0143] The prediction module 430 is used to predict the average input power of the magnetron corresponding to each treatment stage in the initial treatment plan based on the calibration parameters and the single-pulse dose.

[0144] The second determining module 440 is used to determine, based on the predicted average input power, the downshifting scheme for the filament in the magnetron corresponding to the initial treatment plan;

[0145] The iteration module 450 is used to iterate the initial treatment plan based on the withdrawal scheme and the withdrawal stability index to obtain a target withdrawal scheme that meets the withdrawal stability requirements and a target treatment plan corresponding to the target withdrawal scheme.

[0146] The control module 460 is used to perform radiotherapy based on the target treatment plan and to retract the filament according to the target retraction scheme during the radiotherapy process.

[0147] In some embodiments, the prediction module 430 is used to:

[0148] For any of the treatment phases, the pulse repetition frequency corresponding to the treatment phase is determined based on the phase treatment dose, the phase treatment time, and the single pulse dose.

[0149] Based on the pulse repetition frequency, the pulse current amplitude, the pulse voltage amplitude, and the pulse width, the average input power corresponding to the treatment stage is predicted.

[0150] In some embodiments, the second determining module 440 is used to:

[0151] For any of the treatment stages, the state information of the magnetron under that treatment stage is determined based on the average input power corresponding to that treatment stage;

[0152] Based on the status information, the target current value and / or target voltage value of the filament are determined;

[0153] Based on the target current value and / or target voltage value corresponding to each of the treatment stages, the filament downshifting scheme is determined.

[0154] In some embodiments, the second determining module 440 is used to:

[0155] For any of the treatment stages, the target current value and / or target voltage value corresponding to the filament is determined based on the mapping relationship between the input average power and the target current value and / or target voltage value of the filament.

[0156] Based on the target current value and / or target voltage value corresponding to each of the treatment stages, the filament downshifting scheme is determined.

[0157] In some embodiments, the stability metric includes a first threshold and a second threshold;

[0158] The iteration module 450 is used for:

[0159] Determine the amplitude of the change in filament current and / or voltage between adjacent treatment stages in the withdrawal scheme, and the number of adjustments to filament current and / or voltage within a preset time window;

[0160] If the magnitude of the change is greater than the first threshold and / or the number of adjustments is greater than the second threshold, the initial treatment plan is adjusted, and a withdrawal scheme corresponding to the adjusted initial treatment plan is determined.

[0161] The iteration ends when the change magnitude of the adjusted rollback scheme is less than or equal to the first threshold and the number of adjustments is less than or equal to the second threshold.

[0162] In some embodiments, the apparatus further includes a third determining module 470, configured to:

[0163] For any calibration parameter, the first parameter value of the radiotherapy device at a first position in the working state is collected; the first position includes the secondary side of the transformer of the radiotherapy device;

[0164] Based on the pre-calibrated parameter mapping curve and the first parameter value, the second parameter value of the radiotherapy device at the second position in the working state is determined; the second position includes the input side of the magnetron of the radiotherapy device.

[0165] Based on the second parameter value, the calibration parameters of the magnetron are determined.

[0166] In some embodiments, the control module 460 is used to:

[0167] When switching between adjacent treatment stages, the filament is controlled according to the target current value and / or target voltage value corresponding to the next treatment stage.

[0168] The magnetron filament retraction device provided in this application obtains treatment demand information and magnetron calibration parameters, determines an initial treatment plan based on single-pulse dose, and further predicts the average magnetron input power corresponding to each treatment stage. Based on this, a filament retraction scheme is determined, and the initial treatment plan is iteratively applied in conjunction with retraction stability indicators to obtain a target retraction scheme and a target treatment plan. Therefore, it is possible to predetermine the filament retraction strategy matching each treatment stage before the start of radiotherapy, reducing the lag caused by retraction control based on the current state or the state at the previous moment in the prior art, making filament retraction better adapt to the dynamically changing treatment plan, which is beneficial to improving the stability of magnetron operation and extending the service life of magnetron.

[0169] Furthermore, this application predicts the average input power of the magnetron for each treatment stage in the initial treatment plan based on the magnetron's calibration parameters and single-pulse dose. This makes the formulation of the filament downshifting scheme closer to the actual power requirements of the magnetron at each treatment stage, which helps to improve the accuracy of downshifting control and avoids the magnetron's operating state deviating from the reasonable operating point due to inaccurate downshifting criteria.

[0170] Furthermore, this application does not directly execute filament shedding according to the initial treatment plan, but further combines shedding stability indicators to iteratively refine the initial treatment plan, thereby obtaining a target shedding scheme and target treatment plan that meet the shedding stability requirements. This allows for consideration of the frequency and magnitude of filament shedding switching between different treatment stages, avoiding excessively frequent or large changes in the filament state within a short period of time. This helps improve the stability of the filament shedding process and reduces the risk of affecting the stable operation of the magnetron due to unreasonable shedding switching.

[0171] The processing flow of each module in the device and the interaction flow between each module can be referred to the relevant descriptions in the above method embodiments, and will not be detailed here.

[0172] This application also provides a computer device, such as... Figure 5 The diagram shown is a schematic representation of a computer device structure according to an exemplary embodiment of this application. The computer device includes:

[0173] A processor 51 and a memory 52; the memory 52 stores machine-readable instructions executable by the processor 51, and the processor 51 executes the machine-readable instructions stored in the memory 52. ​​When the machine-readable instructions are executed by the processor 51, the processor 51 performs the following steps:

[0174] Acquire treatment requirement information and calibration parameters of the magnetron in the radiotherapy device; the treatment requirement information includes the total dose required for treatment and the total treatment duration; the calibration parameters include the pulse current amplitude, pulse voltage amplitude, and pulse width of the magnetron in the working state;

[0175] Based on the single-pulse dose corresponding to the magnetron and the treatment requirement information, an initial treatment plan is determined; the initial treatment plan indicates at least one treatment phase, and the phase treatment dose and phase treatment time corresponding to the treatment phase;

[0176] Based on the calibration parameters and the single-pulse dose, the average input power of the magnetron corresponding to each treatment stage in the initial treatment plan is predicted;

[0177] Based on the predicted average input power, a downshifting scheme for the filament in the magnetron corresponding to the initial treatment plan is determined.

[0178] Based on the withdrawal scheme and withdrawal stability index, the initial treatment plan is iterated to obtain a target withdrawal scheme that meets the withdrawal stability requirements and a target treatment plan corresponding to the target withdrawal scheme.

[0179] Radiotherapy is performed based on the target treatment plan, and the filament is de-energized according to the target de-energization scheme during the radiotherapy process.

[0180] In some embodiments, predicting the average input power of the magnetron corresponding to each treatment stage in the initial treatment plan based on the calibration parameters and the single-pulse dose includes:

[0181] For any of the treatment phases, the pulse repetition frequency corresponding to the treatment phase is determined based on the phase treatment dose, the phase treatment time, and the single pulse dose.

[0182] Based on the pulse repetition frequency, the pulse current amplitude, the pulse voltage amplitude, and the pulse width, the average input power corresponding to the treatment stage is predicted.

[0183] In some embodiments, determining the downshift scheme for the filament in the magnetron corresponding to the initial treatment plan based on the predicted average input power includes:

[0184] For any of the treatment stages, the state information of the magnetron under that treatment stage is determined based on the average input power corresponding to that treatment stage;

[0185] Based on the status information, the target current value and / or target voltage value of the filament are determined;

[0186] Based on the target current value and / or target voltage value corresponding to each of the treatment stages, the filament downshifting scheme is determined.

[0187] In some embodiments, determining the downshift scheme for the filament in the magnetron corresponding to the initial treatment plan based on the predicted average input power includes:

[0188] For any of the treatment stages, the target current value and / or target voltage value corresponding to the filament is determined based on the mapping relationship between the input average power and the target current value and / or target voltage value of the filament.

[0189] Based on the target current value and / or target voltage value corresponding to each of the treatment stages, the filament downshifting scheme is determined.

[0190] In some embodiments, the stability metric includes a first threshold and a second threshold;

[0191] The step of iteratively refining the initial treatment plan based on the withdrawal scheme and withdrawal stability index includes:

[0192] Determine the amplitude of the change in filament current and / or voltage between adjacent treatment stages in the withdrawal scheme, and the number of adjustments to filament current and / or voltage within a preset time window;

[0193] If the magnitude of the change is greater than the first threshold and / or the number of adjustments is greater than the second threshold, the initial treatment plan is adjusted, and a withdrawal scheme corresponding to the adjusted initial treatment plan is determined.

[0194] The iteration ends when the change magnitude of the adjusted rollback scheme is less than or equal to the first threshold and the number of adjustments is less than or equal to the second threshold.

[0195] In some embodiments, the processor 51 is also configured to perform:

[0196] For any calibration parameter, the first parameter value of the radiotherapy device at a first position in the working state is collected; the first position includes the secondary side of the transformer of the radiotherapy device;

[0197] Based on the pre-calibrated parameter mapping curve and the first parameter value, the second parameter value of the radiotherapy device at the second position in the working state is determined; the second position includes the input side of the magnetron of the radiotherapy device.

[0198] Based on the second parameter value, the calibration parameters of the magnetron are determined.

[0199] In some embodiments, the step of retarding the filament according to the target retarding scheme during the radiotherapy includes:

[0200] When switching between adjacent treatment stages, the filament is controlled according to the target current value and / or target voltage value corresponding to the next treatment stage.

[0201] The aforementioned memory 52 includes a main memory 521 and an external memory 522; the main memory 521, also known as internal memory, is used to temporarily store the computational data in the processor 51, as well as the data exchanged with external memory 522 such as a hard disk. The processor 51 exchanges data with the external memory 522 through the main memory 521.

[0202] The specific execution process of the above instructions can be referred to the steps of the magnetron filament retraction method described in the embodiments of this application, and will not be repeated here.

[0203] For the device embodiments, since they basically correspond to the method embodiments, the relevant parts can be referred to in the description of the method embodiments. The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this application according to actual needs. Those skilled in the art can understand and implement this without creative effort.

[0204] This application also provides a computer-readable storage medium storing a computer program. When executed by a processor, the computer program performs the steps of the magnetron filament retraction method described in the above-described method embodiments. The storage medium can be either volatile or non-volatile computer-readable storage.

[0205] This application also provides a computer program product, including a computer program / instruction, which, when executed by the computer program / instruction processor, implements the magnetron filament retraction method provided in the various embodiments of this application.

[0206] The aforementioned computer program product can be implemented through hardware, software, or a combination thereof. In one optional embodiment, the computer program product is specifically embodied in a computer storage medium; in another optional embodiment, the computer program product is specifically embodied in a software product, such as a software development kit (SDK), etc.

[0207] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems and devices described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. In the several embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of units is only a logical functional division; in actual implementation, there may be other division methods. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Another point is that the displayed or discussed mutual coupling or direct coupling or communication connection may be through some communication interfaces; the indirect coupling or communication connection of devices or units may be electrical, mechanical, or other forms.

[0208] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0209] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0210] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a processor-executable, non-volatile, computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0211] Finally, it should be noted that the above-described embodiments are merely specific implementations of this application, used to illustrate the technical solutions of this application, and not to limit them. The scope of protection of this application is not limited thereto. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some of the technical features, within the scope of the technology disclosed in this application. Such modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

[0212] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A method for retracting the filament of a magnetron, characterized in that, Applied to a radiotherapy device, the method includes: Acquire treatment requirement information and calibration parameters of the magnetron in the radiotherapy device; the treatment requirement information includes the total dose required for treatment and the total treatment duration; the calibration parameters include the pulse current amplitude, pulse voltage amplitude, and pulse width of the magnetron in the working state; Based on the single-pulse dose corresponding to the magnetron and the treatment requirement information, an initial treatment plan is determined; the initial treatment plan indicates at least one treatment phase, and the phase treatment dose and phase treatment time corresponding to the treatment phase; Based on the calibration parameters and the single-pulse dose, the average input power of the magnetron corresponding to each treatment stage in the initial treatment plan is predicted; Based on the predicted average input power, a downshifting scheme for the filament in the magnetron corresponding to the initial treatment plan is determined. Based on the withdrawal scheme and withdrawal stability index, the initial treatment plan is iterated to obtain a target withdrawal scheme that meets the withdrawal stability requirements and a target treatment plan corresponding to the target withdrawal scheme. Radiotherapy is performed based on the target treatment plan, and the filament is de-energized according to the target de-energization scheme during the radiotherapy process.

2. The method according to claim 1, characterized in that, The prediction of the average input power of the magnetron corresponding to each treatment stage in the initial treatment plan, based on the calibration parameters and the single-pulse dose, includes: For any of the treatment phases, the pulse repetition frequency corresponding to the treatment phase is determined based on the phase treatment dose, the phase treatment time, and the single pulse dose. Based on the pulse repetition frequency, the pulse current amplitude, the pulse voltage amplitude, and the pulse width, the average input power corresponding to the treatment stage is predicted.

3. The method according to claim 1, characterized in that, The step of determining the downshift scheme for the filament in the magnetron corresponding to the initial treatment plan based on the predicted average input power includes: For any of the treatment stages, the state information of the magnetron under that treatment stage is determined based on the average input power corresponding to that treatment stage; Based on the status information, the target current value and / or target voltage value of the filament are determined; Based on the target current value and / or target voltage value corresponding to each of the treatment stages, the filament downshifting scheme is determined.

4. The method according to claim 1, characterized in that, The step of determining the downshift scheme for the filament in the magnetron corresponding to the initial treatment plan based on the predicted average input power includes: For any of the treatment stages, the target current value and / or target voltage value corresponding to the filament is determined based on the mapping relationship between the input average power and the target current value and / or target voltage value of the filament. Based on the target current value and / or target voltage value corresponding to each of the treatment stages, the filament downshifting scheme is determined.

5. The method according to claim 1, characterized in that, The stability index includes a first threshold and a second threshold; The step of iteratively refining the initial treatment plan based on the withdrawal scheme and withdrawal stability index includes: Determine the amplitude of the change in filament current and / or voltage between adjacent treatment stages in the withdrawal scheme, and the number of adjustments to filament current and / or voltage within a preset time window; If the magnitude of the change is greater than the first threshold and / or the number of adjustments is greater than the second threshold, the initial treatment plan is adjusted, and a withdrawal scheme corresponding to the adjusted initial treatment plan is determined. The iteration ends when the change magnitude of the adjusted rollback scheme is less than or equal to the first threshold and the number of adjustments is less than or equal to the second threshold.

6. The method according to claim 1, characterized in that, The calibration parameters of the magnetron in the radiotherapy device are determined by the following steps: For any calibration parameter, the first parameter value of the radiotherapy device at a first position in the working state is collected; the first position includes the secondary side of the transformer of the radiotherapy device; Based on the pre-calibrated parameter mapping curve and the first parameter value, the second parameter value of the radiotherapy device at the second position in the working state is determined; the second position includes the input side of the magnetron of the radiotherapy device. Based on the second parameter value, the calibration parameters of the magnetron are determined.

7. The method according to claim 1, characterized in that, The step of retracting the filament according to the target retraction plan during the radiotherapy includes: When switching between adjacent treatment stages, the filament is controlled according to the target current value and / or target voltage value corresponding to the next treatment stage.

8. A magnetron filament retraction device, characterized in that, For use in radiotherapy equipment, the apparatus includes: The acquisition module is used to acquire treatment requirement information and calibration parameters of the magnetron in the radiotherapy device; the treatment requirement information includes the total dose required for treatment and the total treatment duration; the calibration parameters include the pulse current amplitude, pulse voltage amplitude and pulse width of the magnetron in the working state. The first determining module is used to determine an initial treatment plan based on the single-pulse dose corresponding to the magnetron and the treatment requirement information; the initial treatment plan indicates at least one treatment phase, and the phase treatment dose and phase treatment time corresponding to the treatment phase; The prediction module is used to predict the average input power of the magnetron corresponding to each treatment stage in the initial treatment plan based on the calibration parameters and the single-pulse dose. The second determining module is used to determine, based on the predicted average input power, the downshifting scheme for the filament in the magnetron corresponding to the initial treatment plan; An iterative module is used to iterate the initial treatment plan based on the withdrawal scheme and the withdrawal stability index to obtain a target withdrawal scheme that meets the withdrawal stability requirements and a target treatment plan corresponding to the target withdrawal scheme. The control module is used to perform radiotherapy based on the target treatment plan and to retract the filament according to the target retraction scheme during the radiotherapy process.

9. A computer device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the program, it implements the steps of the method as described in any one of claims 1 to 7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the program is executed by a processor, it implements the steps of the method as described in any one of claims 1 to 7.

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