Display backboard and manufacturing method thereof

By covering the ohmic contact layer and metal layer of the Micro LED display backplane with a transparent protective layer, the problem of abnormal lighting caused by chip voltage rise is solved, achieving effective protection and ensuring the normal operation of the Micro LED display backplane.

CN122269902APending Publication Date: 2026-06-23CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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Patent Information

Application Number
CN202411896532.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-19
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

As the size of Micro LED chips shrinks, the voltage of the light-emitting chip increases dramatically, leading to abnormal lighting problems. These problems are mainly caused by etching of the ohmic contact layer and scratches on the metal layer, which are difficult to prevent effectively with existing technologies.

Method used

By covering the ohmic contact layer and the metal layer with a transparent protective layer, using ITO, IZO or IGZO protective layer to prevent solution corrosion and PV etching, the ohmic contact layer and the metal layer are protected from damage, forming an LED step structure and connecting the common electrode layer.

Benefits of technology

It effectively prevents the ohmic contact layer from being etched and the metal layer from being scratched, avoids the chip voltage from rising, ensures the chip lights up normally, and improves the reliability of the Micro LED display backplane.

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Abstract

The invention discloses a display backboard and a manufacturing method thereof, and the method comprises the steps: providing an epitaxial bonding substrate which comprises a substrate and a film layer structure which are sequentially stacked, and the film layer structure comprises a bonding layer, an epitaxial layer and an ohmic contact layer which are sequentially stacked on the substrate; forming a metal layer on the surface of the ohmic contact layer, and etching the metal layer to form a plurality of sub-metal layers; forming a transparent protective layer to cover the sub-metal layer and the ohmic contact layer; isolation groove etching is carried out on the surrounding area of the sub-metal layer, a plurality of LED step structures are obtained, and each LED step structure comprises a sub-epitaxial layer, a sub-ohmic contact layer, a sub-metal layer and a sub-transparent protection layer which are stacked in sequence; forming a passivation layer to cover the outer wall of the LED step structure and the groove bottom of the isolation groove, and forming a via hole in the passivation layer above each sub-transparent protection layer to expose the sub-transparent protection layer; and forming a common electrode layer to cover the passivation layer and the sub-transparent protection layer in the via hole. According to the method, the voltage abnormity that the ohmic contact layer is corroded by the inner side and the metal layer is etched can be effectively prevented.
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