Preparation method of patterned ultrathin YBCO (Yttrium Barium Copper Oxide) device without material removal
Selective modification of YBCO thin films by hydrogen plasma treatment solves the problems of low efficiency and damage in existing patterning methods, achieves high-precision patterning and protection of superconducting properties, and improves the electrical performance of the device.
Patent Information
- Application Number
- CN202610387004.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-27
- Publication Date
- 2026-06-26
AI Technical Summary
Existing techniques for fabricating high-temperature superconducting nanowire single-photon detectors suffer from problems such as low processing efficiency, severe material damage, and difficulty in controlling the etching rate, making it difficult to achieve high-precision patterning and protect the superconducting properties of YBCO.
Selective modification of YBCO thin films is achieved using hydrogen plasma within a specific process window. Non-etching patterning is realized through chemical-structure coupling. By utilizing the interaction between hydrogen ions and the YBCO lattice, the superconducting state in local areas is transformed into an insulating state, while the photoresist-covered areas retain their original superconductivity.
High-precision patterning at the submicron and even nanometer scale was achieved without removing the material, avoiding sidewall damage and over-etching, and improving the switching current and superconducting transport performance of the device.