Integrated etching method
By using a combination of carbon monoxide, carbon dioxide, hydrogen, and inert gases in a post-etching process to remove fluoropolymers, the reliability and yield issues caused by etching residues were resolved, and device performance was improved.
CN122373790APending Publication Date: 2026-07-10HUA HONG SEMICONDUCTOR MANUFACTURING (WUXI) LTD +1
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Patent Information
- Application Number
- CN202610417251.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-31
- Publication Date
- 2026-07-10
AI Technical Summary
Technical Problem
In integrated etching processes, residual fluoropolymers can lead to residual metal fluorine oxides, resulting in decreased reliability and yield of device products, especially in small node processes where through-hole defects are easily generated.
Method used
The post-etching process involves introducing a combination of carbon monoxide, carbon dioxide, hydrogen, and inert gases to remove fluoropolymers. Hydrogen reduces metal fluorine oxides into volatiles, and the inert gases are discharged through a vacuum pump to suppress oxygen activity and reduce residues.
Benefits of technology
It effectively removes fluoropolymer residues, reduces the formation of metal fluorine oxides, improves the reliability and yield of device products, and reduces perforation defects.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses an integrated etching method which comprises the steps that integrated etching is carried out, grooves are formed in a metal layer and a first dielectric layer, the first dielectric layer is formed on a second dielectric layer, metal wires are formed in the second dielectric layer, the metal wires at the bottoms of the grooves are exposed, and materials contained in the metal wires and the metal layer are different; post-etching is carried out to remove the fluorocarbon polymer generated in the integrated etching, and the post-etching comprises three etching stages: in the first etching stage, the introduced reaction gas comprises carbon monoxide and / or carbon dioxide; in the second etching stage, the introduced reaction gas comprises hydrogen and inert gas; in the third etching stage, the introduced reaction gas comprises carbon monoxide and / or carbon dioxide. In the post-etching process of integrated etching, the etching stage of the reaction gas containing the hydrogen and the inert gas is added, so that generation of metal oxyfluoride residues can be reduced, and the reliability and the yield of device products are improved.
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